Article
Physics, Multidisciplinary
Xu-Long Chu, Zeng Liu, Yu-Song Zhi, Yuan-Yuan Liu, Shao-Hui Zhang, Chao Wu, Ang Gao, Pei-Gang Li, Dao-You Guo, Zhen-Ping Wu, Wei-Hua Tang
Summary: In this study, EFG-grown beta-Ga2O3-based Schottky photodiodes were reported, demonstrating low leakage current and high rectified ratio. The photodiode detector showed excellent performance at zero bias, indicating potential advancement in solar-blind photodetectors.
Article
Engineering, Electrical & Electronic
Wei-Yu Jiang, Zeng Liu, Shan Li, Zu-Yong Yan, Cheng-Ling Lu, Pei-Gang Li, Yu-Feng Guo, Wei-Hua Tang
Summary: The Si-doped beta-Ga2O3 trench Schottky photodiode designed in this work functions as a dual-mode solar-blind ultraviolet sensor with high performance characteristics. It has the potential to be a self-powered photodetector and shows promise for ultraviolet solar-blind detection applications.
IEEE SENSORS JOURNAL
(2021)
Article
Physics, Applied
Yingqiu Zhang, Yuefei Wang, Rongpeng Fu, Jiangang Ma, Haiyang Xu, Bingsheng Li, Yichun Liu
Summary: The authors report the development of an indium tin oxide (ITO) decorated solar-blind deep ultraviolet photodetector based on high quality beta-Ga2O3 single crystal microwires. The device exhibits excellent performances including high responsivity, low dark current, fast rise and fall time, and high solar-blind/visible rejection ratio.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Zeming Li, Teng Jiao, Wancheng Li, Gaoqiang Deng, Wei Chen, Zhengda Li, Zhaoti Diao, Xin Dong, Baolin Zhang, Yuantao Zhang, Zengjiang Wang, Guotong Du
Summary: Beta-Ga2O3 is a promising material for solar-blind UV detection, and the crystal quality significantly affects the performance of photodetectors. In this study, high quality homoepitaxial beta-Ga2O3 films were grown by MOCVD for SBUV PD fabrication, demonstrating excellent performance for both photoconductor PD and SBD PD. The responsivity and EQE of photoconductor PD were 1.08 A/W and 5.32 x 102% under 254nm illumination, while the I-254/Idark and rejection ratio of SBD PD were 320 and 42, respectively.
Article
Chemistry, Multidisciplinary
Taejun Park, Sangbin Park, Joon Hui Park, Ji Young Min, Yusup Jung, Sinsu Kyoung, Tai Young Kang, Kyunghwan Kim, You Seung Rim, Jeongsoo Hong
Summary: A high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/beta-Ga2O3 heterojunction was fabricated. The detector exhibits rectification characteristics and high photo-responsivity at zero bias voltage.
Article
Materials Science, Multidisciplinary
Yixiong Zheng, Md Nazmul Hasan, Jung-Hun Seo
Summary: This study demonstrates Si/beta-Ga2O3 solar-blind photodetectors with high photoresponsivity and quantum efficiency. The unique heterogeneous integration method provides a viable route for achieving high-performance photodetection systems.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Chemistry, Physical
Wenhao Ding, Xianquan Meng
Summary: Gallium nitride nanowires and beta-Ga2O3 nanowires were prepared using chemical vapor deposition to fabricate a solar-blind ultraviolet detector. The detector shows excellent response to deep ultraviolet light with high detectivity and stability, making it a promising device for UV detection applications.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Yu Pei, Lingyan Liang, Xiaolong Wang, Zhenhua Wang, Hengbo Zhang, Junyan Ren, Hongtao Cao
Summary: By using seed-induced engineering, crystalline Ga2O3 material was successfully prepared at a lower processing temperature, showing promising performance in solarblind photodetectors.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Di Wang, Xiaochen Ma, Rongrong Chen, Yong Le, Biao Zhang, Hongdi Xiao, Caina Luan, Jin Ma
Summary: The effects of Ta doping concentration on the performance of Ta-doped Ga2O3 films used for solar blind ultraviolet detectors were investigated. It was found that increasing Ta doping concentration significantly improved the responsivity and light-dark current ratio of the detectors.
Article
Materials Science, Multidisciplinary
Chao Wu, Fengmin Wu, Haizheng Hu, Shunli Wang, Aiping Liu, Daoyou Guo
Summary: This review summarizes the recent research progress on self-powered solar-blind photodetectors based on Ga2O3. The detectors are classified into different types, and the fundamental properties of Ga2O3, the basic working principles of self-powered photodetectors, and the device processing developments are summarized. Finally, conclusions regarding recent advances, remaining challenges, and prospects are presented and discussed.
MATERIALS TODAY PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Yunze Liu, Leyun Shen, Xinhua Pan, Tao Zhang, Huishan Wu, Ning Wang, Peng Wang, Fengzhi Wang, Zhizhen Ye
Summary: In this work, a high-performance self-powered deep-ultraviolet CuI/Ga2O3 heterojunction photodetector was proposed, which was fabricated using pulsed laser deposition and vacuum thermal evaporation methods. The device showed excellent and stable self-powered performance with an on-off ratio of 1 x 10(4), R of 1.44 mA/W, and D* of 5.94 x 10(11)Jones at 0 V bias. Even under weak deep-UV light of 2.7 μW/cm2, the device still exhibited outstanding photo-response properties with D* of 1.76 x 10(12)Jones. The photodetector demonstrated superior performance compared to other previously reported self-powered photodetectors based on Ga2O3. This work has great potential for fabricating deep-UV detection devices with high sensitivity.
SENSORS AND ACTUATORS A-PHYSICAL
(2023)
Article
Physics, Multidisciplinary
Dun-Zhou Xu, Peng Jin, Peng-Fei Xu, Meng-Yang Feng, Ju Wu, Zhan-Guo Wang
Summary: In this study, a Ga2O3/diamond separate absorption and multiplication avalanche photodiode (SAM-APD) with mesa structure is proposed and simulated. The device exhibits good solar-blind detection ability and high gain, with a peak responsivity as high as 78 A/W.
Article
Nanoscience & Nanotechnology
Guang Zeng, Xiao-Xi Li, Yu-Chun Li, Ding-Bo Chen, Yu-Chang Chen, Xue-Feng Zhao, Na Chen, Ting-Yun Wang, David Wei Zhang, Hong-Liang Lu
Summary: A high-performance photodetector using exfoliated beta-Ga2O3 flakes and zero-dimensional graphene quantum dots (GQDs) is reported, which shows enhanced photoresponsivity and photoelectric performance through effective charge transfer and holds potential for commercial applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Yuehui Wang, Shengyao Li, Jia Cao, Yucheng Jiang, Yang Zhang, Weihua Tang, Zhenping Wu
Summary: Ga2O3-based solar-blind ultraviolet photodetectors have garnered significant attention for various applications. While they have made progress in key metrics, such as responsivity and detectivity, their response time remains slow. This study investigates the impact of illumination intensity and bias voltage on the response speed of a Ga2O3-based PD, revealing the mechanisms behind accelerated response time. The findings provide insights for optimizing the performance of Ga2O3-based PDs.
MATERIALS & DESIGN
(2022)
Article
Nanoscience & Nanotechnology
Xiao Tang, Yi Lu, Shibin Krishna, Wedyan Babatain, Mohamed Ben Hassine, Che-Hao Liao, Na Xiao, Zhiyuan Liu, Xiaohang Li
Summary: In this study, a high-quality metastable kappa-phase Ga2O3 thin film was epitaxially grown on a flexible mica substrate. The developed flexible photodetector exhibited record-high performance for flexible Ga2O3 photodetectors and demonstrated excellent flexibility and mechanical stability.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Multidisciplinary
Yue-Hua An, Zhen-Sen Gao, Yu Guo, Shao-Hui Zhang, Zeng Liu, Wei-Hua Tang
Summary: The epsilon-Ga2O3 thin film was grown on a sapphire substrate using MOCVD method, and then utilized for the fabrication of a DUV photodetector. The thin film exhibited good crystal quality and surface morphology. The photodetector showed excellent optoelectronic performance and high wavelength selectivity when exposed to 254-nm DUV light, with a photoresponsivity of 175.69 A/W, detectivity of 2.46 x 10(15) Jones, EQE of 8.6 x 10(4)%, and good photocurrent-intensity linearity. At 5 V and under illumination with 800 mu W/cm(2) light intensity, a photocurrent gain as high as 859 was achieved due to the recycling gain mechanism and delayed carrier recombination; however, the photocurrent gain decreased with increasing incident light intensity due to the recombination of photogenerated carriers by the large photon flux.
Article
Engineering, Electrical & Electronic
Xiao-Hui Qi, Zeng Liu, Xue-Qiang Ji, Jian-Ying Yue, Yu-Song Zhi, Shan Li, Zu-Yong Yan, Yu-Feng Guo, Wei-Hua Tang
Summary: In this article, a deep-ultraviolet (DUV) photodetector (PD) based on a Ga2O3/TiO2 planar heterojunction is fabricated using both the solution and the metalorganic chemical vapor deposition (MOCVD) methods. The PD exhibits impressive DUV sensing properties, including high responsivity (R), specific detectivity (D-*), and external quantum efficiency (EQE). The PD can operate stably in a self-powered mode and has potential for applications in energy-conserving DUV sensing systems.
IEEE SENSORS JOURNAL
(2023)
Article
Physics, Applied
Shan Li, Lili Yang, Zeng Liu, Maolin Zhang, Yufeng Guo, Weihua Tang
Summary: This study reported an ultraviolet photodetector constructed on a simple vertical PEDOT:PSS/SiC hybrid heterojunction, which demonstrated superior self-powered performance. The SiC based photodetector achieved self-powered responsivity over A/W level, comparable with many reported 4H-SiC avalanche photodiodes, due to the abundant charge carrier concentration in 4H-SiC substrate and the large built-in field at PEDOT:PSS/SiC heterointerface. The fabricated PD showed high responsivity, detectivity, and external quantum efficiency, fast rise/decay time, large on-off switching ratio, high spectral rejection ratio, and long lifetime reliability.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Xueqiang Ji, Jianying Yue, Xiaohui Qi, Zuyong Yan, Shan Li, Chao Lu, Zhitong Li, Zeng Liu, Song Qi, Xu Yan, Jinjin Wang, Shuang Wang, Peigang Li, Weihua Tang
Summary: In this study, stable and tunable electron concentration in fl-Ga2O3 homoepitaxial epitaxial films was achieved by using metal-organic chemical vapor deposition (MOCVD) on Fe-doped (010)-oriented fl-Ga2O3 substrates. The electrical properties of the films were found to vary depending on the concentration of Si ions incorporated during the growth process. The results suggest that stable and tunable electron concentration is crucial for optimizing high-power electronic devices based on fl-Ga2O3.
Article
Nanoscience & Nanotechnology
Zhaoying Xi, Zeng Liu, Lili Yang, Kai Tang, Lei Li, Gaohui Shen, Maolin Zhang, Shan Li, Yufeng Guo, Weihua Tang
Summary: In this study, a solar-blind UV photodetector based on a La2O3/e-Ga2O3 heterojunction was successfully fabricated, which possesses excellent reliability and sensitivity for flame detection without interference from other signals. The photodetector exhibits a self-powered photocurrent of 1.4 nA at zero bias due to the photovoltaic effect formed by the space charge region across the junction interface. Furthermore, the photodetector achieves a high photo-to-dark current ratio of 2.68 x 10(4), a high specific detectivity of 2.31 x 10(11) Jones, and a large responsivity of 1.67 mA/W under 254 nm UV light illumination and at a bias of 5 V. Additionally, the La2O3/e-Ga2O3 heterojunction photodetector can rapidly respond to flames in milliseconds without any applied biases. Based on these performances, this novel heterojunction is expected to be a candidate for future energy-efficient fire detection.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
Gaohui Shen, Zeng Liu, Chee-Keong Tan, Mingming Jiang, Shan Li, Yufeng Guo, Weihua Tang
Summary: A solar-blind UV photodetector array based on a metalorganic chemical vapor deposition-grown beta-Ga2O3 thin film is fabricated for optical communication application. The device demonstrates high performance with a significant photo-to-dark current ratio, high responsivity, high external quantum efficiency, high specific detectivity, and fast response time. The array shows good spectral selectivity and low background noise, enabling effective outputting of information signals in optical communication.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Environmental
Yinhua Cui, Qingshan Shi, Zeng Liu, Jingchun Lv, Chao Wang, Xiaobao Xie, Shaohui Zhang
Summary: In this study, a new approach is proposed to prepare flexible MXene/biomass/chitosan aerogel (MBC) electrodes with pseudo-capacitive properties through electro-static self-assembly and hydrothermal methods. The MBC-6 electrode, annealed by lyophilization, exhibits a volumetric specific capacitance of 1801.4 mF/cm3 and an ultra-high volume energy density of 33.4 Wh/L. This research presents a plausible approach for creating energy storage devices with high energy density and voltage window.
CHEMICAL ENGINEERING JOURNAL
(2023)
Article
Physics, Applied
Xueqiang Ji, Xiaohui Qi, Jianying Yue, JinJin Wang, Zuyong Yan, Shan Li, Zeng Liu, Weihua Tang, Peigang Li
Summary: A nonthermal N plasma-based treatment is proposed to obtain a doped surface on ss-Ga2O3 films, which enhances the luminescence effect related to acceptor defects. The surface conductive properties are enhanced by the defect compensation of oxygen vacancy (VO) donor defects. Detailed investigations into the surface defect compensation of N-doped Ga2O3 thin films have great research potential for device applications.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Multidisciplinary
Maolin Zhang, Wanyu Ma, Qiong Zhang, Ang Bian, Zeng Liu, Lili Yang, Shan Li, Yufeng Guo, Weihua Tang
Summary: In this study, a heterojunction photodetector combining MAPbBr3 and GaN was constructed, and its detection capabilities were examined. The results demonstrated superior performance, including high rectification ratio and photo-to-dark current ratio. Additionally, the characteristics of the photodetector and possible methods for further performance enhancements were discussed.
Article
Engineering, Multidisciplinary
Gaohui Shen, Zeng Liu, Kai Tang, Shulin Sha, Lei Li, Chee-Keong Tan, Yufeng Guo, Weihua Tang
Summary: This study introduces an 8x8 Ga2O3 solar-blind ultraviolet photodetector array with high photo-response performance and uniform responsivity, which is of great significance for developing Ga2O3-based optoelectronic device applications.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES
(2023)
Article
Materials Science, Multidisciplinary
Maolin Zhang, Wanyu Ma, Zeng Liu, Lili Yang, Shan Li, Yufeng Guo, Weihua Tang
Summary: Given the critical impact of high-temperature environments on the detection performance and stability of deep ultraviolet (DUV) photonic devices, the research on high-temperature resistant DUV photodetectors (PDs) using fl-Ga2O3 material has become significantly important. This study successfully fabricated fl-Ga2O3 metal-semiconductor-metal (MSM) PDs and achieved high-performance and stable operation at elevated temperatures.
RESULTS IN PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Song Qi, Jiahang Liu, Jianying Yue, Xueqiang Ji, Jiaying Shen, Yongtao Yang, Jinjin Wang, Shan Li, Zhenping Wu, Weihua Tang
Summary: In this work, a graphene/beta-Ga2O3/Ag asymmetric Schottky junction photodetector was constructed to address the issue of elevated dark currents in existing graphene/Ga2O3 devices. By taking advantage of the asymmetric structure design to suppress dark current and the transparent graphene electrode to increase carrier collection efficiency, the device achieved outstanding responsivity, detectivity, external quantum efficiency, and response time. Importantly, it exhibited low dark current and high light-to-dark ratio. Overall, the graphene/beta-Ga2O3/Ag asymmetric Schottky junction photodetector has considerable potential as a deep ultraviolet detector.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)