Article
Polymer Science
Gregory Soon How Thien, Kah-Yoong Chan, Ab Rahman Marlinda
Summary: Halide perovskites (HPs) are currently being widely used in various applications such as photovoltaics and resistive switching (RS) devices. The properties of high electrical conductivity, tunable bandgap, good stability, and low-cost synthesis and processing make HPs promising as active layers in RS devices. Recent reports have also discussed the use of polymers to improve the RS properties of lead (Pb) and Pb-free HP devices. This review explores the role of polymers in optimizing HP RS devices and successfully investigates their effects on the ON/OFF ratio, retention, and endurance properties.
Article
Chemistry, Multidisciplinary
So-Yeon Kim, June-Mo Yang, Sun-Ho Lee, Nam-Gyu Park
Summary: Reduction of dimensionality is an effective method to improve the ON/OFF ratio in lead-free perovskites, and introduction of butylammonium can enhance this performance. The resulting 2-dimensional BA(2)CsAgBiBr7 shows bipolar resistive switching behavior with a potential ON/OFF ratio up to 10^7, indicating its durability and multi-level storage capability.
Article
Chemistry, Physical
Feifei Luo, Liuxia Ruan, Junwei Tong, Yanzhao Wu, Caixiang Sun, Gaowu Qin, Fubo Tian, Xianmin Zhang
Summary: The study successfully fabricated Y-MAPbI(3) and MAPbI(3) perovskite films using a one-step solution spin coating method, and prepared resistive switching memory devices. Compared with MAPbI(3), the Y-MAPbI(3) film exhibited a more uniform crystal structure and showed superior endurance and performance in the devices.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
SangMyeong Lee, Won Bin Kim, Jae Myeong Lee, Hee Jung Kim, Jin Hyuk Choi, Hyun Suk Jung
Summary: By utilizing oxide passivation technology, this study significantly improved the endurance and retention performance of HP-based resistive-switching memory devices. The results demonstrated that zirconium oxide is an effective passivation material for enhancing the properties of these devices.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Nanoscience & Nanotechnology
Xiaohan Zhang, Xiaoning Zhao, Xuanyu Shan, Qiaoling Tian, Zhongqiang Wang, Ya Lin, Haiyang Xu, Yichun Liu
Summary: This study investigates the humidity effect on the resistive switching characteristics of Au/CH3NH3PbI3/FTO memristor, finding that the device performs well at moderate humidity (<75%), but degrades rapidly at higher humidity (90%). An obvious decrease in low resistance states with increasing humidity levels is observed, attributed to the reduction of the iodide migration barrier due to water-induced effects on the crystal lattice.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Physical
Zhaohua Zhu, Yan Wu, Yang Shen, Jihua Tan, Dong Shen, Ming-Fai Lo, Menglin Li, Yi Yuan, Jian-Xin Tang, Wenjun Zhang, Sai-Wing Tsang, Zhiqiang Guan, Chun-Sing Lee
Summary: This study presents a highly efficient sky-blue PeLED based on a quasi-two-dimensional structure with an external quantum efficiency of 13.8%. The high efficiency is achieved by suppressing both triplet and trap-assisted nonradiative energy loss using a ligand with high-triplet-energy and dual-functional passivation groups, proposing a universal strategy to improve the efficiency of sky-blue PeLEDs.
CHEMISTRY OF MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Lutao Li, Yuan Chen, Changming Cai, Peipei Ma, Huayong Ji, Guifu Zou
Summary: This study introduces an all-inorganic halide perovskite CsPbBr3 single crystal film (SCF) into resistive memory, demonstrating high-performance memory with ultrahigh switching ratio and fast switching speed. The interface S parameter of metal/CsPbBr3 SCF contact is 0.50, indicating a great interface contact contributing to steady high resistance state. The introduction of halide perovskite SCF in resistive random access memory shows great potential for future computing systems.
Article
Physics, Applied
Jingyang Hu, Long Gao, Wentong Li, Meng Wang, Tuo Cheng, Zhe Li, Xiaoyu Zhang, Yinghui Wang, Jiaqi Zhang
Summary: Organic-inorganic metal halide perovskites have attracted attention in resistive switching memories, but their long-term stability and lead toxicity are obstacles. Here, a lead-free CsCu2Br3 perovskite is proposed as a solution for these issues. The CsCu2Br3-based resistive switching devices exhibit desirable and stable performance, even when exposed to air for months.
APPLIED PHYSICS LETTERS
(2023)
Article
Multidisciplinary Sciences
Stefania Cacovich, Guillaume Vidon, Matteo Degani, Marie Legrand, Laxman Gouda, Jean-Baptiste Puel, Yana Vaynzof, Jean-Francois Guillemoles, Daniel Ory, Giulia Grancini
Summary: Interface engineering using passivating agents is an effective strategy to improve the performance of perovskite solar cells. This study investigates the interface and device physics of high efficiency inverted solar cells, quantifying charge recombination and losses. The results show that organic passivation mainly affects the perovskite/PCBM interface, and the use of organic passivation maximizes the photovoltaic figures of merit.
NATURE COMMUNICATIONS
(2022)
Article
Nanoscience & Nanotechnology
Zehan Liu, Pengpeng Cheng, Yongfei Li, Ruyan Kang, Ziqi Zhang, Zhiyuan Zuo, Jia Zhao
Summary: This study successfully achieved mixed halide CsPbBrxI3-x-based memristors with excellent performance at different temperatures, demonstrating repeatability and stability in high-temperature environments. The results suggest that this novel type of memory devices has potential for application in perovskite wearable and large-scale information devices in high-temperature scenarios.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Multidisciplinary
Martha Judith Rivera Medina, Lorenzo Di Mario, Simon Kahmann, Jun Xi, Giuseppe Portale, Giovanni Bongiovanni, Andrea Mura, Juan Carlos Alonso Huitron, Maria Antonietta Loi
Summary: We demonstrate blue LEDs with high color purity and excellent performance based on quasi-2D perovskites. The inclusion of isopropylammonium as an additive suppresses the formation of bulk-like phases and improves the performance of the LEDs. The study of excitation dynamics reveals hindered energy transfer, resulting in a narrow distribution of quantum well sizes and a high photoluminescence quantum yield.
Article
Chemistry, Physical
Ling Li, Pengcheng Jia, Yang Tang, Bo Song, Junhan Guo, Jun Sun, Di Zhao, Liang Qin, Zhidong Lou, Yufeng Hu, Feng Teng, Yanbing Hou
Summary: The photovoltaic performance of perovskite solar cells is improved by employing TiO2/CsAC as an electron transport layer, which helps alleviate non-radiative losses and achieve high-performance devices.
JOURNAL OF PHYSICAL CHEMISTRY C
(2022)
Article
Chemistry, Multidisciplinary
Bo Li, Zhen Li, Danpeng Gao, Xin Wu, Xintong Li, Chunlei Zhang, Shuai Li, Jianqiu Gong, Dong Zhang, Xiangfan Xie, Shuang Xiao, Haipeng Lu, Mingjie Li, Zonglong Zhu
Summary: By designing long-chain alkylamines as crystallization buffer molecules, the residual strain in tin perovskite films was released, thus improving the photovoltaic performance and stability of lead-stabilized tin perovskite solar cells (TPSCs).
MATERIALS CHEMISTRY FRONTIERS
(2023)
Article
Chemistry, Multidisciplinary
Jing Lu, Tinghuan Yang, Tianqi Niu, Nuo Bu, Yalan Zhang, Shiqiang Wang, Junjie Fang, Xiaoming Chang, Tao Luo, Jialun Wen, Yingguo Yang, Zicheng Ding, Kui Zhao, Shengzhong (Frank) Liu
Summary: This study comprehensively investigates the growth, structure, and optoelectronic properties of FA-based layered perovskites, revealing the influence of FA:PMA ratios and n values on the structure and performance of layered perovskites.
ENERGY & ENVIRONMENTAL SCIENCE
(2022)
Article
Chemistry, Physical
Tao Zhu, Lening Shen, Hanlin Chen, Yongrui Yang, Luyao Zheng, Rui Chen, Jie Zheng, Junpeng Wang, Xiong Gong
Summary: Conjugated molecules have been effectively utilized to enhance the performance of perovskite solar cells, with the incorporation of novel conjugated aniline leading to improved efficiency and stability in the reported study. This demonstrates the potential of incorporating conjugated molecules as organic spacer cations to create 2D perovskites on top of 3D perovskites for high-performance PSCs.
JOURNAL OF MATERIALS CHEMISTRY A
(2021)
Article
Nanoscience & Nanotechnology
Youngjun Park, Jang-Sik Lee
Summary: Organic-inorganic halide perovskites (OIHPs), especially stable two-dimensional Dion-Jacobson OIHPs, have shown great potential in resistive switching memory (RSM). The grain sizes of OIHP can be effectively controlled to modulate the paths for ion migration, thus changing the on/off ratio of RSM. In high-density memory applications, selector devices are necessary to suppress leakage current from neighboring cells. These findings highlight the potential of OIHP for use in high-density memory applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Eun-Kyeong Jang, Ik-Jyae Kim, Cheon An Lee, Chiweon Yoon, Jang-Sik Lee
Summary: This study simulated 3D NAND flash to investigate the influence of deposition temperatures on residual stress and electrical characteristics. The relationship between residual stress and electrical characteristics was described using the energy band shift. These findings have the potential to improve cell performances and optimize process parameters in 3D NAND flash technology.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2022)
Article
Multidisciplinary Sciences
Min-Kyu Kim, Ik-Jyae Kim, Jang-Sik Lee
Summary: In this study, integrated ferroelectric thin-film transistor (FeTFT) synaptic arrays were demonstrated to provide efficient parallel programming and data processing for CNNs through selective and accurate control of polarization in the ferroelectric layer.
Article
Physics, Applied
Ik-Jyae Kim, Min-Kyu Kim, Jang-Sik Lee
Summary: This study demonstrates the scalability of Hafnia-based ferroelectric thin-film transistors (FeTFTs) to a 10-nm dimension and showcases their high scalability and suitability for ultrahigh-density memory applications.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Youngjun Park, Jang-Sik Lee
Summary: There is an increased demand for next-generation memory devices with high density and fast operation speed. Memristors are promising candidates for this due to their scalability, stable data retention, low power consumption, and fast operation. Among various types of memristors, halide perovskites show potential as emerging materials for memristors. However, there are challenges and problems to be solved for the practical application of halide perovskites in next-generation memory devices.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Dongshin Kim, Jang-Sik Lee
Summary: In this study, chemical synapses for neuromorphic devices were developed to emulate the signaling processes in a nervous system. The ionic permeability of a polymer membrane was controlled to simulate the signal transmission behavior of biological neurons depending on the concentration of the injected neurotransmitter solution.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Review
Chemistry, Multidisciplinary
Ik-Jyae Kim, Jang-Sik Lee
Summary: This review summarizes the recent developments in ferroelectric devices, particularly ferroelectric transistors, for next-generation memory and neuromorphic applications. It first reviews the types and operation mechanisms of ferroelectric memories, then discusses the issues limiting the realization of high-performance ferroelectric transistors and possible solutions. It also reviews the experimental demonstration of ferroelectric transistor arrays, including 3D ferroelectric NAND and its operation characteristics, and outlines the challenges and strategies towards the development of next-generation memory and neuromorphic applications based on ferroelectric transistors.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Ik-Jyae Kim, Min-Kyu Kim, Jang-Sik Lee
Summary: Oxide semiconductors are promising channel materials for hafnia-based ferroelectric transistor memories. A novel design strategy is proposed to achieve increased polarization switching in oxide semiconductor-based thin-film transistors. By inserting an additional p-type CuOx layer, increased polarization switching is achieved. The results demonstrate a novel structure and fabrication method for high-performance FeTFTs for advanced 3D non-volatile memory applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Multidisciplinary Sciences
Ik-Jyae Kim, Min-Kyu Kim, Jang-Sik Lee
Summary: Hardware-based neural networks (NNs) have the potential to revolutionize AI applications by extracting features from unstructured data and learning from them. However, implementing complex NN models is challenging because different tasks require different memory elements and arrays, resulting in increased chip size.
NATURE COMMUNICATIONS
(2023)
Article
Nanoscience & Nanotechnology
Goutam Kumar Gupta, Ik-Jyae Kim, Youngjun Park, Min-Kyu Kim, Jang-Sik Lee
Summary: This study demonstrates a photonic multimodal synaptic device with favorable band alignment that enables optically induced charge trapping and nonvolatile memory characteristics. The device exhibits high photoresponse and excellent synaptic characteristics through gate voltage regulation. It also shows multiwavelength response and a large dynamic range suitable for accurate artificial neural network. The simulation results based on experimental data show excellent pattern recognition accuracy after 120 epochs, demonstrating the feasibility of the device as an optical synapse in the next-generation neuromorphic system.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Min-Kyu Kim, Ik-Jyae Kim, Jang-Sik Lee
Summary: Zirconium-doped hafnium oxide (HfZrOx) films were studied to investigate the effects of ozone exposure time during the atomic layer deposition (ALD) process on their polarization and endurance characteristics. It was found that HfZrOx with an ozone exposure time of 2.5 s exhibited the most stable endurance characteristics due to its low initial defect concentration, which was confirmed by leakage current analysis. This study highlights the importance of controlling the ozone exposure time in ALD to optimize the formation of defects in HfZrOx films for improved polarization and endurance characteristics.
Article
Engineering, Electrical & Electronic
Dongshin Kim, Jang-Sik Lee
Summary: Liquid-based devices have gained attention as bioinspired neuromorphic applications due to their advantageous properties, including high ion-diffusion coefficients and controllable ion-exchange reactions. By engineering liquid materials, multifunctional computing devices have been developed for memory and neuromorphic purposes, emulating synaptic plasticity, homeostasis, and action potentials. Utilizing liquids in computing devices offers a promising platform for high-performance memory devices and enables bioinspired computing functions.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Min-Kyu Song, Ji-Hoon Kang, Xinyuan Zhang, Wonjae Ji, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol, Bowei Dong, Samarth Aggarwal, Weier Wan, Seok-Man Hong, Suma George Cardwell, Irem Boybat, Jae-sun Seo, Jang-Sik Lee, Mario Lanza, Hanwool Yeon, Murat Onen, Ju Li, Bilge Yildiz, Jesus A. del Alamo, Seyoung Kim, Shinhyun Choi, Gianluca Milano, Carlo Ricciardi, Lambert Alff, Yang Chai, Zhongrui Wang, Harish Bhaskaran, Mark C. Hersam, Dmitri Strukov, H. -S. Philip Wong, Ilia Valov, Bin Gao, Huaqiang Wu, Ronald Tetzlaff, Abu Sebastian, Wei Lu, Leon Chua, J. Joshua Yang, Jeehwan Kim
Summary: Memristive technology, with oxide-based resistive switches as memristors, has gained significant attention due to its biomimetic memory properties and potential improvement in power consumption. This review provides a comprehensive overview of recent advances in memristive technology, including devices, theory, algorithms, architectures, and systems. It also discusses research directions for applications in AI hardware accelerators, in-sensor computing, and probabilistic computing. Furthermore, it offers a forward-looking perspective, outlining challenges and opportunities for further research and innovation in this field.
Article
Engineering, Electrical & Electronic
Ik-Jyae Kim, Jang-Sik Lee
Summary: This study presents a low-thermal-budget transparent ferroelectric transistor with high transmittance and good switching performance, which is suitable for next-generation transparent display technologies.
IEEE ELECTRON DEVICE LETTERS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Jang-Sik Lee
Summary: Recently, there has been active research on the fabrication and characterization of ferroelectric materials and devices for memory and neuromorphic device applications. This paper discusses the recent research activities on the fabrication of ferroelectric thin-film transistors (FeTFTs) in detail, aiming to develop high-density memory devices. Furthermore, FeTFTs demonstrate analog memory characteristics by controlling the polarization states of ferroelectric materials, making them suitable for neuromorphic device applications.
TWENTY-NINETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES: TFT TECHNOLOGIES AND FPD MATERIALS (AM-FPD 22)
(2022)
