Journal
APPLIED PHYSICS LETTERS
Volume 121, Issue 4, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0097795
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Funding
- Samsung Research Funding & Incubation Center of Samsung Electronics [SRFC-TA1903-05]
- National Research Foundation of Korea [NRF-2019R1A2C2084114, NRF-2020M3F3A2A01081774]
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This study demonstrates the scalability of Hafnia-based ferroelectric thin-film transistors (FeTFTs) to a 10-nm dimension and showcases their high scalability and suitability for ultrahigh-density memory applications.
Hafnia-based ferroelectric thin-film transistors (FeTFTs) are regarded as promising candidates for future nonvolatile memory devices owing to their low power consumption, high operational speed, and complementary metal-oxide-semiconductor compatibility. However, the scalability of hafnia-based materials and the feasibility of three-dimensional (3D) device fabrication should be confirmed for ultrahigh-density memory applications. In this work, we demonstrate that FeTFTs can be scaled down to a 10-nm dimension using the vertical structure with a hafnia-based ferroelectric gate insulating layer and an oxide semiconductor channel. We show that such vertical FeTFTs can be operated with an effective device size of 0.005 mu m(2), a fast operation speed of < 100 ns, and a high endurance of 10(8) cycles. Additionally, the string-level NAND operation is demonstrated using the vertical FeTFT array. Finally, device simulation confirms the possibility of ultrahigh-density 3D ferroelectric NAND with 200 gate stacks. These results demonstrate the ultrahigh scalability of FeTFTs as a promising candidate for next-generation 3D nonvolatile memory. Published under an exclusive license by AIP Publishing.
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