Article
Physics, Applied
Yi-Jan Lin, Chih-Yu Teng, Chenming Hu, Chun-Jung Su, Yuan-Chieh Tseng
Summary: This paper proposes an approach to enhance Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase formation through in situ NH3 plasma treatment. The treatment suppresses interfacial diffusion between HZO and the top TiN electrode, reducing oxygen vacancies within HZO. The results demonstrate improved reliability and ferroelectric performance of HZO devices with stable transfer characteristics and memory windows after NH3 treatment.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Uwe Schroeder, Ridham Sachdeva, Patrick D. Lomenzo, Bohan Xu, Monica Materano, Thomas Mikolajick, Alfred Kersch
Summary: This study introduces Raman spectroscopy as a method to accurately identify different phases in the HfO2 and Hf1-xZrxO2 systems by comparing experimental data with density functional simulation results. It is found that changes in phonon mode frequencies can be correlated to the appearance of ferroelectric properties.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Materials Science, Coatings & Films
Kaveh Ahadi, Ken Cadien
Summary: Through low temperature plasma enhanced atomic layer deposition, defect-free dielectric-semiconductor interfaces were achieved on GaN and InP substrates, enabling the development of negative capacitance field effect transistors with sub-Boltzmann limit swing. Alloyed and stacked gate dielectrics showed promising properties, such as reduced refractive index, wider bandgap, and minimal hysteresis, contributing to low interfacial trap density and improved band alignment in heterojunctions.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Chemistry, Physical
Sang Cheng, Yao Zhou, Yushu Li, Chao Yuan, Mingcong Yang, Jing Fu, Jun Hu, Jinliang He, Qi Li
Summary: Polymer film capacitors are limited by conduction loss at high temperatures, but a polymer dielectric sandwiched by medium-dielectric-constant nanoscale deposition layers shows suppressed conduction loss and improved performance. Balanced bandgap, dielectric constant, and electrical conductivity of the deposition layer are crucial for suppressing charge injection. The optimized design with a polyetherimide film and Al2O3 deposition layers achieves high energy density and charge-discharge efficiency at temperatures up to 200 degrees C, rivaling expensive composite approaches.
ENERGY STORAGE MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Lin Hao, Gang He, Shanshan Jiang, Zhenxiang Dai, Ganhong Zheng, Jinyu Lu, Lesheng Qiao, Jingbiao Cui
Summary: This study achieved the improvement of interface chemistry and transport characteristics of Hf1-xYbxOy/Al2O3/GaSb gate stacks through interface passivation and doping engineering technology. The experimental results show that the gate stack has potential application in future GaSb-based metal-oxide-semiconductor field effect transistor (MOSFET) devices.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2022)
Article
Chemistry, Multidisciplinary
Haojie Xu, Fapeng Sun, Wuqian Guo, Shiguo Han, Yi Liu, Qingshun Fan, Liwei Tang, Wei Liu, Junhua Luo, Zhihua Sun
Summary: A series of 2D hybrid perovskite ferroelectric semiconductors were constructed by combining inorganic and organic components. These materials exhibit high Curie temperatures and photoconductivity, making them suitable for channel field effect transistors and gate-tunable memory devices. This work provides valuable insights for the exploration of ferroelectric materials in new non-volatile memory applications.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Nanoscience & Nanotechnology
Il-Kwon Oh, Asir Intisar Khan, Shengjun Qin, Yujin Lee, H. -S. Philip Wong, Eric Pop, Stacey F. Bent
Summary: This study explores the application of area-selective atomic layer deposition (AS-ALD) technique in the fabrication of RRAM devices and finds that AS-ALD can improve the reliability and accuracy of RRAM, regardless of device size. The application of this technique will contribute to the improvement of other data storage technologies.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Ceramics
Neeraj Singh, Kundan Kumar, Preetam Singh
Summary: This study synthesized Ti-substituted Trirutile CoNb2O6 ceramics for the first time and found that the substitution of Ti4+ ions significantly enhanced the dielectric constant of the material. The samples also exhibited ferroelectric behavior and showed a relaxor type behavior.
JOURNAL OF ELECTROCERAMICS
(2023)
Article
Nanoscience & Nanotechnology
Fei Yang, Zijian He, Bingkun Liu, Bo Hu, Shilong Lou, Duogui Li, Wentao Wang
Summary: An electrothermal coupling model of resistive random access memory (RRAM) was established based on the oxygen vacancy conduction mechanism. The introduction of La2O3 as a sidewall material was found to accelerate the formation of conductive filaments and reduce the forming voltage increase during miniaturization. Additionally, low thermal conductivity was discovered to decrease the forming voltage and increase temperature concentration.
Article
Materials Science, Multidisciplinary
Taeho Kim, Junghyeon Hwang, Giuk Kim, Minhyun Jung, Sanghun Jeon
Summary: Research suggests that the degradation of the interfacial dielectric layer is a major obstacle for FeFETs, but researchers have proposed a new structural approach to improve memory window and reliability properties.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Qiang Huo, Yiming Yang, Yiming Wang, Dengyun Lei, Xiangqu Fu, Qirui Ren, Xiaoxin Xu, Qing Luo, Guozhong Xing, Chengying Chen, Xin Si, Hao Wu, Yiyang Yuan, Qiang Li, Xiaoran Li, Xinghua Wang, Meng-Fan Chang, Feng Zhang, Ming Liu
Summary: Three-dimensional computing-in-memory circuits based on vertical resistive random-access memory and complementary metal-oxide-semiconductor technologies can provide efficient hardware for artificial neural networks. Non-volatile computing-in-memory macros based on two-dimensional arrays of memristors are useful for the development of AI edge devices. The reported macro offers high energy efficiency for 3D vector-matrix multiplication operations and improves accuracy in brain MRI edge detection and CIFAR-10 dataset inference compared to conventional methods.
NATURE ELECTRONICS
(2022)
Article
Optics
Leon Messner, Elizabeth Robertson, Luisa Esguerra, Kathy Luedge, Janik Wolters
Summary: The importance of researching multiplexed quantum memory systems for optical quantum computation and communication technologies is highlighted, as well as the current challenge of systems that only perform well with elaborate preparation. In this study, a multiplexed random-access memory is demonstrated to store up to four optical pulses using electromagnetically induced transparency in warm cesium vapor. The results show a mean internal storage efficiency of 36% and a 1/e lifetime of 3.2 microsecond, facilitating the implementation of multiplexed memories in future quantum communication and computation infrastructures.
Article
Nanoscience & Nanotechnology
Min Ju Kim, Alba Martinez, Jaejoong Jeong, Seongho Kim, Wan Sik Hwang, Byung Jin Cho
Summary: This study proposes hybrid (H-) ReRAM devices using ultra-thin hybrid films prepared via initiated chemical vapor deposition (iCVD), and demonstrates their reliable performance under various temperature conditions. The unique composition of the conducting filament in these devices makes them potential candidates for alternative memory devices as well as neuromorphic and cognitive computing devices.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Computer Science, Information Systems
Jinho Choi, Jie Ding
Summary: This study investigates reliable transmissions for grant-free random access in machine-type communication, proposing a random network coding based scheme to improve reliability. Simulation results demonstrate that the proposed scheme utilizing random network coding outperforms the conventional K-repetition approach.
IEEE WIRELESS COMMUNICATIONS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Shankha Mukherjee, Jasper Bizindavyi, Sergiu Clima, Mihaela I. Popovici, Xiaoyu Piao, Kostantine Katcko, Francky Catthoor, Shimeng Yu, Valeri V. Afanas'ev, Jan Van Houdt
Summary: In this work, energy-efficient memory elements with non-volatile memory windows and non-destructive read operation are demonstrated. The record high non-volatile capacitive memory window is achieved by engineering asymmetry in ferroelectric-metal interfaces and optimizing the read voltage. The reliable non-destructive read operation is ensured by carefully selecting the read voltage.
IEEE ELECTRON DEVICE LETTERS
(2023)
Review
Chemistry, Multidisciplinary
Ju Yong Park, Duk-Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung-Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
Summary: The research on ferroelectric memories has been limited in the past due to scalability and compatibility issues. However, the discovery of ferroelectricity in certain oxides has revived interest in the field. The potential of inducing nanoscale nonvolatility in gate insulators has been demonstrated. However, technical limitations and variations in reliability need to be addressed for practical applications in various types of devices.
ADVANCED MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Thomas Mikolajick, Min Hyuk Park, Laura Begon-Lours, Stefan Slesazeck
Summary: Due to the low voltage driven switching and nonvolatility, ferroelectric materials have great potential for low power nonvolatile electronic devices. However, the incompatibility of well-known ferroelectrics with existing semiconductor technology has hindered the competitiveness of these devices. The discovery of ferroelectricity in hafnium oxide has changed this situation. This article summarizes the material science of ferroelectricity in hafnium oxide, discusses the status of nonvolatile ferroelectric memories, explores applications like in-memory computing, and showcases the realization of neuromorphic computing systems using basic building blocks of spiking neural networks.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Physical
Kun Yang, Se Hyun Kim, Hyun Woo Jeong, Dong Hyun Lee, Geun Hyeong Park, Younghwan Lee, Min Hyuk Park
Summary: Ferroelectric fluorite-structured oxide thin films have unique properties such as superior scalability and compatibility with current technology. As the size of the films shrinks, the contribution of the interfacial layer becomes more important, and understanding the interface chemistry is crucial for industrial applications. This review focuses on the emerging semiconductor devices based on ferroelectric oxide thin films and discusses the impact of interface chemistry on their properties.
CHEMISTRY OF MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Song-Hyeon Kuk, Seungmin Han, Dong Hyun Lee, Bong Ho Kim, Joonsup Shim, Min Hyuk Park, Jae-Hoon Han, Sang-Hyeon Kim
Summary: We propose a higher-kappa non-hysteric ferroelectric field-effect transistor (FEFET) using reversible domain wall displacement. Our HfZrOx-based FEFET showed remarkable performance as both a logic and a memory device by separately stimulating reversible and irreversible domain walls. The feasibility of logic and memory co-integration was demonstrated by common fabrication process with CMOS compatibility.
IEEE ELECTRON DEVICE LETTERS
(2023)
Review
Nanoscience & Nanotechnology
Ju Yong Park, Dong Hyun Lee, Geun Hyeong Park, Jaewook Lee, Younghwan Lee, Min Hyuk Park
Summary: HfO2-based ferroelectric thin films have attracted significant interest for their compatibility with CMOS technology. While they can be scaled to thicknesses as low as 10 nm while retaining ferroelectric properties, reducing the thickness below 5 nm and preserving ferroelectricity remains a challenge. This review extensively discusses the size effect of HfO2-based ferroelectric thin films and explores the impact of thickness on ferroelectric properties and the electrical performance of devices. Recent developments in achieving sub-5 nm ferroelectric HfO2 and its applications are also discussed.
Correction
Materials Science, Multidisciplinary
Dong Hyun Lee, Geun Taek Yu, Ju Yong Park, Se Hyun Kim, Kun Yang, Geun Hyeong Park, Jin Ju Ryu, Je In Lee, Gun Hwan Kim, Min Hyuk Park
Review
Chemistry, Multidisciplinary
Dong Hyun Lee, Younghwan Lee, Yong Hyeon Cho, Hyojun Choi, Se Hyun Kim, Min Hyuk Park
Summary: Ferroelectric materials are regarded as ideal for emerging memory devices due to their unique remanent polarization. However, the slow progress of ferroelectric memories is attributed to issues like the lack of CMOS-compatible and scalable materials. In recent years, the discovery of ferroelectricity in CMOS-compatible materials like (Hf,Zr)O-2 and (Al,Sc)N has sparked increasing interest. With advancements in material fabrication, a metastable polar phase and switchable polarization can be induced in these materials. However, challenges still exist for their use in emerging memory devices, which are comprehensively reviewed in this article.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Younghwan Lee, Hyun Woo Jeong, Se Hyun Kim, Kun Yang, Min Hyuk Park
Summary: This article discusses the effects of stress/strain on FF thin films, including the mechanisms, material properties, and device performances. Research in this field is crucial for understanding and optimizing FF thin films and related devices.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Materials Science, Multidisciplinary
Beom Yong Kim, In Soo Lee, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, Seung Ryong Byun, Kyung Do Kim, Jae Hoon Lee, Deok-Yong Cho, Min Hyuk Park, Cheol Seong Hwang
Summary: This study systematically investigates the effects of TiN, Ru, and RuO2 top electrodes on the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) films. The Ru top electrode significantly improves the ferroelectric performance, achieving a higher two-remanent polarization (2P(r)) value compared to TiN and RuO2 TEs. Interfacial engineering, such as inserting a HfON layer, further enhances the performance of the capacitor. This study highlights the importance of interfacial engineering in overcoming the trade-off between P-r and endurance in ferroelectric doped HfO2-based films.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Engineering, Electrical & Electronic
Min Hyuk Park, Geun Hyeong Park, Dong Hyun Lee, Hyojun Choi, Taegyu Kwon, Yong Hyeon Cho, Se Hyun Kim
Summary: The ferroelectric properties of fluorite-structured oxides have attracted significant attention due to their potential applications in nonvolatile memory devices. Additionally, the antiferroelectricity of these materials has also been explored, although not in as much detail as the ferroelectric properties. The unique properties of fluorite-structured antiferroelectrics make them suitable for various semiconductor applications.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Song-Hyeon Kuk, Seung-Min Han, Bong Ho Kim, Joon Pyo Kim, Seong-Kwang Kim, Seung-Yeop Ahn, Min Hyuk Park, Jae-Hoon Han, Sang-Hyeon Kim
Summary: HfZrOx-based Si n-/p-type ferroelectric field-effect transistors (n/pFEFETs) were studied from 300 to 82 K using pulse measurements, revealing the device physics at low temperatures. FEFET showed significantly improved performance at 82 K, including a read-after-write latency of <100 ns and write endurance exceeding 10^10 cycles without device degradation. Despite the increase in coercive field, a lower write voltage was achievable at 82 K compared to 300 K. This enhancement is attributed to frozen trap sites and increased coercive field at 82 K. Our work provides a comprehensive understanding of device physics and highlights the potential of FEFET as a cold memory.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Kun Yang, Gi-Yeop Kim, Jin Joo Ryu, Dong Hyun Lee, Ju Yong Park, Se Hyun Kim, Geun Hyeong Park, Geun Taek Yu, Gun Hwan Kim, Si Young Choi, Min Hyuk Park
Summary: The ferroelectricity of Hf0.5Zr0.5O2 thin films makes them suitable for current and future electronic devices. A new strategy of providing oxygen from a surface-oxidized W electrode is proposed to maximize the remanent polarization of Hf0.5Zr0.5O2. Comparisons between Hf0.5Zr0.5O2 thin films with TiN and W electrodes reveal that the oxygen supply from the W electrode enhances the ferroelectric properties and increases the remanent polarization.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Engineering, Electrical & Electronic
Geun Hyeong Park, Dong Hyun Lee, Hyojun Choi, Taegyu Kwon, Yong Hyeon Cho, Se Hyun Kim, Min Hyuk Park
Summary: This paper comprehensively reviews the emerging antiferroelectricity of fluorite-structured oxides and discusses their potential applications in semiconductor devices.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Correction
Chemistry, Multidisciplinary
Se Hyun Kim, Geun Taek Yu, Geun Hyeong Park, Dong Hyun Lee, Ju Yong Park, Kun Yang, Eun Been Lee, Je In Lee, Min Hyuk Park
CHEMICAL COMMUNICATIONS
(2023)
Review
Nanoscience & Nanotechnology
Jaewook Lee, Kun Yang, Ju Young Kwon, Ji Eun Kim, Dong In Han, Dong Hyun Lee, Jung Ho Yoon, Min Hyuk Park
Summary: HfO2 is a promising material for emerging ferroelectric and resistive switching memory devices due to its excellent electrical properties and compatibility with existing fabrication processes. The presence of oxygen vacancies (Vo) in HfO2 films greatly affects the material properties, device performance, and reliability. Understanding the formation mechanism and effects of Vo is crucial for improving the performance and reliability of HfO2-based devices.
