Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes

标题

作者

关键词

出版物

Volume 41, Issue 9, Pages 1328-1331

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2020-07-22

DOI

10.1109/led.2020.3010784

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