2D MoS2-Based Threshold Switching Memristor for Artificial Neuron

Published 2020 View Full Article

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Title
2D MoS2-Based Threshold Switching Memristor for Artificial Neuron
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 6, Pages 936-939
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-04-17
DOI
10.1109/led.2020.2988247

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