Article
Materials Science, Multidisciplinary
Peng-Lin Wang, Hui-Qing Sun, Xiao Ding, Zhi-Hui Huang, Yuan Li, Fan Xia, Xiao-Yu Xia, Miao Zhang, Jian-Cheng Ma, Xiu-Yang Tan, Liang Xu, Zhi-You Guo
Summary: The RF performance of novel Sc-Doped GaN HEMTs with asymmetric air-bridge structure was analyzed using TCAD software. By utilizing an innovative design with an asymmetrical air bridge and ScAlN layer, significant improvements in transconductance and electron velocity, as well as a reduction in electron concentration, were achieved in the device. Additionally, the combined influence of the air bridge and scandium layer structure on capacitance and other parameters provides a useful approach for enhancing the DC and RF characteristics of GaN HEMTs.
RESULTS IN PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Junao Cheng, Mohammad Wahidur Rahman, Andy Xie, Hao Xue, Shahadat Hasan Sohel, Edward Beam, Cathy Lee, Hao Yang, Caiyu Wang, Yu Cao, Siddharth Rajan, Wu Lu
Summary: In this study, ScAlN/GaN dielectric superjunction high-electron-mobility transistors with high-k passivation layer BZN were demonstrated to enhance breakdown voltage. The use of SiN/BZN/SiN sandwiched passivation layer improved the average breakdown voltage while maintaining similar fT and fmax values. This work shows that high current and high breakdown voltage can be achieved simultaneously on semiconductor heterostructures with high sheet charge density by integrating high-k dielectrics.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Jincan Zhang, Xuefeng Hou, Min Liu, Shi Yang, Bo Liu, Jinchan Wang, Juwei Zhang
Summary: This paper proposes an improved genetic algorithm-based hybrid direct-optimal extraction method for small-signal model of GaN HEMT devices. Simulated annealing algorithm and fuzzy adaptive strategy are incorporated into genetic algorithm for model parameter optimization, and the validity of the proposed algorithm is verified.
MICROELECTRONICS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Jincan Zhang, Xuefeng Hou, Min Liu, Shi Yang, Bo Liu, Jinchan Wang, Juwei Zhang
Summary: This paper proposes an improved genetic algorithm-based hybrid direct-optimal extraction method for small-signal model of GaN HEMT devices, and verifies its effectiveness by using a 20-element GaN HEMT small-signal equivalent circuit model.
MICROELECTRONICS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Ziyue Zhao, Yang Lu, Chupeng Yi, Yilin Chen, Xiaolong Cai, Yu Zhang, Xiangyang Duan, Xiaohua Ma, Yue Hao
Summary: An accurate and efficient parasitic parameter extraction method for GaN HEMTs is proposed in this study, combining a small signal equivalent circuit model and series parasitic inductances to precisely describe the device characteristics and improve high frequency simulation. The influence of Cpda and Cpga on parameter extraction is evaluated through matrix transformation and equation derivation, showing that the error caused by these influences is less than 3%, and ignoring them can simplify calculations and ensure accuracy.
SOLID-STATE ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Zhifu Hu, Shaohua Zhou, Ruicong He, Qijun Zhang
Summary: This study replaces the single-gate HEMT with a dual-gate HEMT based on the distributed stacked structure VVA proposed by Qorvo, achieving a broadband and high-power tolerance voltage variable attenuator (VVA) while reducing chip area and cost. Experimental results show that the dual-gate HEMT VVA outperforms the single-gate HEMT VVA in terms of power compression point, insertion loss, dynamic range, and chip area.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Haiyi Cai, Jincan Zhang, Min Liu, Shi Yang, Shaowei Wang, Bo Liu, Juwei Zhang
Summary: An improved particle swarm optimization (APSO) algorithm is proposed in this paper for optimizing the intrinsic parameters of the GaN HEMT 20-element small-signal model. Experimental results show that the APSO algorithm greatly improves the situation of falling into a local optimum for the traditional PSO algorithm, and enables more accurate and faster parameter extraction of the GaN HEMT small-signal model in the frequency range of 0.5-20 GHz.
MICROELECTRONICS JOURNAL
(2023)
Article
Chemistry, Multidisciplinary
Jaeyong Jeong, Seong Kwang Kim, Jongmin Kim, Dae-Myeong Geum, Duckhyun Kim, Eunju Jo, Hakcheon Jeong, Juyeong Park, Jae-Hyung Jang, Shinhyun Choi, Inyong Kwon, Sanghyeon Kim
Summary: Next-generation wireless communication requires high-frequency, multi-functionality, and power-efficient systems. To achieve this, researchers have been working on the monolithic integration of III-V compound semiconductor and Si CMOS technology. In this study, they successfully demonstrated heterogeneous and monolithic 3D analog/RF-digital mixed-signal integrated circuits that combine InGaAs HEMTs with high f(T) and f(MAX) and Si CMOS mixed-signal circuits, achieving high unity current gain cutoff frequency and power gain cutoff frequency without interference.
Article
Chemistry, Analytical
Kun-Ming Chen, Chuang-Ju Lin, Chia-Wei Chuang, Hsuan-Cheng Pai, Edward-Yi Chang, Guo-Wei Huang
Summary: In this study, the trapping effect on GaN high-electron-mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MIS-HEMTs) was investigated using X-parameter measurements under ultraviolet (UV) light. The results showed that the trapping effect can be reduced by UV illumination, leading to improved performance in terms of large-signal output wave and small-signal forward gain. The presence of a SiN passivation layer in MIS-HEMTs further enhanced their RF power performance. However, the performance enhancement induced by UV light was offset by excess traps in the SiN layer. It is therefore crucial to minimize the number of traps in the AlGaN surface, GaN buffer, and SiN layer for optimal large-signal performance of AlGaN/GaN transistors.
Article
Engineering, Electrical & Electronic
Pragyey Kumar Kaushik, Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu
Summary: This article investigates the effect of low gate bias on R-L in a small-signal model and shows that channel resistance has strong bias dependence. It is observed that R-L dominates above the threshold voltage and yields significant changes in drain-to-source resistance and capacitance. Matching the intrinsic Y-parameter, R-L is found to be important, with good agreement between simulated and measured S-parameters data up to 40 GHz.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Nanoscience & Nanotechnology
Ding Wang, Ping Wang, Shubham Mondal, Subhajit Mohanty, Tao Ma, Elaheh Ahmadi, Zetian Mi
Summary: This paper reports on the resistive switching behavior and memory effect in an ultrawide-bandgap ferroelectric ScAlN/GaN heterostructure. The structure exhibits stable ON and OFF states that last for months at room temperature, and shows stable operation at high temperatures close to or even above the Curie temperature. The underlying mechanism is directly related to charge reconstruction induced by the ferroelectric field effect at the hetero-interface. The polar heterostructure demonstrates robust resistive switching landscape and electrical polarization engineering capability, and has the potential to integrate with both silicon and GaN technologies, enabling a wide range of multifunctional applications.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Physics, Applied
Ding Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi
Summary: In this Letter, fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (HEMTs) were demonstrated using molecular beam epitaxy. The fabricated ferroelectric gate HEMTs showed counterclockwise hysteretic transfer curves with a wide threshold voltage tuning range, a large ON/OFF ratio, and reconfigurable output characteristics. The high quality ferroelectric gate stack and effective ferroelectric polarization coupling lead to improved subthreshold performance. These results provide fundamental insight into the ferroelectric polarization coupling and threshold tuning processes in ferroelectric nitride heterostructures and have promising applications in next-generation electronics.
APPLIED PHYSICS LETTERS
(2023)
Review
Engineering, Electrical & Electronic
Yuhao Zhang, Ahmad Zubair, Zhihong Liu, Ming Xiao, Joshua Perozek, Yunwei Ma, Tomas Palacios
Summary: Gallium nitride (GaN) is increasingly utilized in power and RF applications, with FinFET and trigate architectures being leveraged to develop advanced GaN devices. These devices offer superior gate controllability and various structural innovations, enabling higher performance in terms of current ratio, threshold swing, and channel effects suppression. Several GaN FinFET and trigate device technologies are nearing commercialization, presenting exciting research opportunities in this field.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Materials Science, Multidisciplinary
S. Anju, V. Suresh Babu, Geenu Paul
Summary: In this paper, a T gate head AlGaN/GaN high-electron-mobility transistor (HEMT) on BGO substrate is proposed and optimized for channel length, gate length and gate position. The device shows optimum values for unity gain cut-off frequency (f(T)) and maximum oscillation frequency (f(max)) at 265 GHz and 900 GHz respectively. Compared with other recent technologies, the proposed device demonstrates superior RF performance.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Chemistry, Multidisciplinary
Jihoon Kim
Summary: This paper proposes a new small-signal equivalent circuit for gallium nitride (GaN) high electron mobility transistors (HEMTs) considering source via effects, which better reproduces the measured S12 without compromising accuracy of other S-parameters up to 67 GHz.
APPLIED SCIENCES-BASEL
(2021)
Article
Engineering, Electrical & Electronic
Neil Moser, Jonathan McCandless, Antonio Crespo, Kevin Leedy, Andrew Green, Adam Neal, Shin Mou, Elaheh Ahmadi, James Speck, Kelson Chabak, Nathalia Peixoto, Gregg Jessen
IEEE ELECTRON DEVICE LETTERS
(2017)
Article
Engineering, Electrical & Electronic
Andrew Joseph Green, Kelson D. Chabak, Michele Baldini, Neil Moser, Ryan Gilbert, Robert C. Fitch, Guenter Wagner, Zbigniew Galazka, Jonathan McCandless, Antonio Crespo, Kevin Leedy, Gregg H. Jessen
IEEE ELECTRON DEVICE LETTERS
(2017)
Article
Engineering, Electrical & Electronic
Kelson D. Chabak, Jonathan P. McCandless, Neil A. Moser, Andrew J. Green, Krishnamurthy Mahalingam, Antonio Crespo, Nolan Hendricks, Brandon M. Howe, Stephen E. Tetlak, Kevin Leedy, Robert C. Fitch, Daiki Wakimoto, Kohei Sasaki, Akito Kuramata, Gregg H. Jessen
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Physics, Applied
Kyle J. Liddy, Andrew J. Green, Nolan S. Hendricks, Eric R. Heller, Neil A. Moser, Kevin D. Leedy, Andreas Popp, Miles T. Lindquist, Stephen E. Tetlak, Guenter Wagner, Kelson D. Chabak, Gregg H. Jessen
APPLIED PHYSICS EXPRESS
(2019)
Article
Engineering, Electrical & Electronic
Neil A. Moser, Tadj Asel, Kyle J. Liddy, Miles Lindquist, Nicholas C. Miller, Shin Mou, Adam Neal, Dennis E. Walker, Steve Tetlak, Kevin D. Leedy, Gregg H. Jessen, Andrew J. Green, Kelson D. Chabak
IEEE ELECTRON DEVICE LETTERS
(2020)
Article
Physics, Applied
Neil Moser, Kyle Liddy, Ahmad Islam, Nicholas Miller, Kevin Leedy, Thaddeus Asel, Shin Mou, Andrew Green, Kelson Chabak
APPLIED PHYSICS LETTERS
(2020)
Article
Engineering, Electrical & Electronic
Daniel M. Dryden, Kyle J. Liddy, Ahmad E. Islam, Jeremiah C. Williams, Dennis E. Walker, Nolan S. Hendricks, Neil A. Moser, Andrea Arias-Purdue, Nicholas P. Sepelak, Kursti DeLello, Kelson D. Chabak, Andrew J. Green
Summary: We demonstrate a passivated MESFET fabricated on (010) Si-doped beta-Ga2O3 with breakdown over 2.4 kV without field plates, high Power Figure of Merit (PFOM), and high estimated Huang's Material Figure of Merit (HMFOM), owing to low gate charge and high breakdown. MESFETs with 13 μm source-drain spacing and 75 nm channel exhibited a current density of 61 mA/mm, peak transconductance of 27 mS/mm, and on-resistance of 133 Ω•mm. The device showed a PFOM competitive with state-of-the-art beta-Ga2O3 devices and a record high estimated HMFOM for a beta-Ga2O3 device, competitive with commercial wide-band gap devices. This demonstrates high-performance beta-Ga2O3 devices as viable multi-kV high-voltage power switches.
IEEE ELECTRON DEVICE LETTERS
(2022)
