Characterization of vertical Au/β-Ga2O3single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

标题
Characterization of vertical Au/β-Ga2O3single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
作者
关键词
-
出版物
Chinese Physics B
Volume 25, Issue 1, Pages 017201
出版商
IOP Publishing
发表日期
2016-01-21
DOI
10.1088/1674-1056/25/1/017201

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