Article
Physics, Multidisciplinary
Risto Ojajarvi, F. S. Bergeret, M. A. Silaev, Tero T. Heikkila
Summary: This paper investigates the influence of spin supercurrent phenomenon between superconductor and ferromagnet on magnetization dynamics. By observing magnetic hysteresis and ferromagnetic resonance response in experiments, the analog of the current-phase relation is determined and the mechanism of spin supercurrent is explored.
PHYSICAL REVIEW LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Yongcheng Deng, Weihao Li, Xiukai Lan, Enze Zhang, Runze Li, Yaxuan Shang, Shuai Liu, Baohe Li, Xionghua Liu, Houzhi Zheng, Kaiyou Wang
Summary: Field-free magnetization switching is achieved in spin orbit torque crossbar array devices. The mechanism of this switching is revealed through analyzing the current distribution and micromagnetic simulations. The demonstration of tristate switching and write protection is significant for the study and application of spin crossbar array devices.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Maciej Dabrowski, Jade N. Scott, William R. Hendren, Colin M. Forbes, Andreas Frisk, David M. Burn, David G. Newman, Connor R. J. Sait, Paul S. Keatley, Alpha T. N'Diaye, Thorsten Hesjedal, Gerrit van der Laan, Robert M. Bowman, Robert J. Hicken
Summary: This study demonstrates a novel all-optical magnetization switching technology utilizing a perpendicularly magnetized synthetic ferrimagnet, allowing for independent magnetization switching. By applying a spin-polarized current, magnetization switching can be achieved over a broad temperature range, paving the way for the development of new data storage devices.
Article
Physics, Applied
Apu Kumar Jana, Sanghoon Lee
Summary: In this study, we investigated the spin-orbit torque (SOT) switching mechanism of a single layer of crystalline diluted ferromagnetic semiconductor by simulating current scan hysteresis. Our findings revealed the significant impact of the damping-like torque (DLT) to field-like torque (FLT) ratio on SOT switching, providing valuable insights for developing SOT-based devices.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
A. E. Khramova, M. Kobecki, I. A. Akimov, I. Savochkin, M. A. Kozhaev, A. N. Shaposhnikov, V. N. Berzhansky, A. K. Zvezdin, M. Bayer, V. I. Belotelov
Summary: Excitation of spin waves in an iron garnet thin film by a train of femtosecond laser pulses with close repetition rate to the ferromagnetic resonance enables tunable control of spin-wave propagation, making it promising for designing magnonic devices.
Article
Physics, Applied
Suhyeok An, Hyeong-Joo Seo, Eunchong Baek, Soobeom Lee, Chun-Yeol You
Summary: This study investigates the influence of chiral spin configuration on field-free spin-orbit torque-induced magnetization switching. The results show that the stabilized spin configuration plays a crucial role in deterministic switching in the absence of an external field.
APPLIED PHYSICS LETTERS
(2022)
Article
Computer Science, Information Systems
Yucai Li, Nan Zhang, Kaiyou Wang
Summary: Spintronic devices based on spin orbit torques offer advantages in low power consumption, high speed, reconfigurability, and high endurance. By designing a local spin current gradient, magnetization can be switched deterministically without external magnetic field. Experimental results demonstrate the feasibility of field-free deterministic current-induced magnetization switching and logic gates based on these devices.
SCIENCE CHINA-INFORMATION SCIENCES
(2022)
Article
Materials Science, Multidisciplinary
Tomohiro Taniguchi, Shinji Isogami, Yohei Shiokawa, Yugo Ishitani, Eiji Komura, Tomoyuki Sasaki, Seiji Mitani, Masamitsu Hayashi
Summary: We study magnetization switching in the dynamical regime for in-plane magnetized systems and develop a formula for the switching probability. The formula agrees well with numerical simulations and experiments. We find that the transition width of the switching probability increases with decreasing pulse width and the shape of the probability density changes with varying pulse width.
Article
Physics, Applied
C. H. Wan, M. E. Stebliy, X. Wang, G. Q. Yu, X. F. Han, A. G. Kolesnikov, M. A. Bazrov, M. E. Letushev, A. Ognev, A. S. Samardak
Summary: The study investigates gradual magnetization switching driven by spin orbit torque in a Pt/Co/MgO strip, and proposes a phenomenological model to describe the current dependence of magnetization and the dependence of the number of nucleation domains on applied current and magnetic field. The research results may contribute to the development of SOT devices in neuromorphic computing applications.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Qirong Zhu, Wojciech Danowski, Amit Kumar Mondal, Francesco Tassinari, Carlijn L. F. van Beek, G. Henrieke Heideman, Kakali Santra, Sidney R. Cohen, Ben L. Feringa, Ron Naaman
Summary: Electron transmission through chiral molecules depends on the electron's spin, known as Chiral-Induced Spin Selectivity (CISS), with preference for a specific spin determined by the system's handedness and electron tunneling direction. Molecular motors based on overcrowded alkenes exhibit multiple inversions of helical chirality under light and thermal changes, leading to multistate switching of spin selectivity. By modulating the spin selectivity through controlled sequences of helical states, opportunities arise for high spatio-temporal precision in on-demand tuning of spin selectivity.
Article
Physics, Applied
BingJin Chen, James Lourembam, Hong Jing Chung, Sze Ter Lim
Summary: Field-free magnetization switching of a ferromagnetic layer is achieved through spin-orbit torque (SOT) induced antiferromagnetic interlayer exchange coupling (IEC). Magnetization reversal can be achieved within sub-ns under appropriate conditions, with the complete reversal occurring upon removing the current pulse. Furthermore, the critical current density (J(c)) shows a parabolic dependence on the nanomagnet's diameter, with the vertex occurring at 90nm.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Kyoul Han, Kyung Jae Lee, Sanghoon Lee, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna
Summary: We observed field-free spin-orbit-torque (SOT) switching of magnetization in a ferromagnetic semiconductor (Ga,Mn)As film with four-fold in-plane magnetic anisotropy. Magnetization switching between two orthogonal in-plane easy axes was demonstrated through planar Hall resistance measurements without a magnetic field. The chirality of the switching was consistent with SOT arising from spin polarization caused by Dresselhaus- and Rashba-type spin-orbit-induced effective magnetic fields in the (Ga,Mn)As film. The potential for developing a field-free SOT device was indicated by the consistent repeatability of the SOT magnetization switching between two states by applying sequential current pluses with alternating polarities.
Article
Nanoscience & Nanotechnology
Qidong Xie, Weinan Lin, Soumya Sarkar, Xinyu Shu, Shaohai Chen, Liang Liu, Tieyang Zhao, Chenghang Zhou, Han Wang, Jing Zhou, Silvija Gradecak, Jingsheng Chen
Summary: In this study, deterministic switching of perpendicular magnetization is achieved in the SrRuO3/WTe2 bilayer structure, attributed to the out-of-plane spin polarization from the van der Waals material WTe2. Analysis of the spin polarization matrix indicates that the reduced crystal symmetry in WTe2 is responsible for the out-of-plane spin polarization.
Article
Chemistry, Multidisciplinary
Yibo Fan, Xiang Han, Xiaonan Zhao, Yanan Dong, Yanxue Chen, Lihui Bai, Shishen Yan, Yufeng Tian
Summary: This study investigates the IrMn/Co/Ru/CoPt/CoO heterojunction as a potential candidate for multistate memory and programmable spin logic. It demonstrates 10 states of nonvolatile memory and multiple logic-in-memory functions.
Article
Physics, Multidisciplinary
Hongsong Qiu, Lifan Zhou, Caihong Zhang, Jingbo Wu, Yuanzhe Tian, Shaodong Cheng, Shaobo Mi, Haibin Zhao, Qi Zhang, Di Wu, Biaobing Jin, Jian Chen, Peiheng Wu
Summary: Antiferromagnets (AFMs) have the potential to push spintronic devices to terahertz range for high-speed processing, but their insensitivity to magnetic fields makes spin current manipulation difficult. By optically generating ultrafast spin currents in AFM/HM heterostructures, a new avenue for fundamental research into antiferromagnetism and AFM spintronic devices has been opened.
Article
Physics, Applied
Hang Xie, Ziyan Luo, Yumeng Yang, Yihong Wu
APPLIED PHYSICS LETTERS
(2020)
Article
Physics, Applied
Qi Zhang, Yumeng Yang, Ziyan Luo, Yanjun Xu, Rongxiang Nie, Xinhai Zhang, Yihong Wu
PHYSICAL REVIEW APPLIED
(2020)
Article
Engineering, Electrical & Electronic
Yanjun Xu, Yumeng Yang, Yihong Wu
IEEE SENSORS JOURNAL
(2020)
Article
Physics, Applied
Ling Lu, Hang Xie, Ziyan Luo, Natchammai Muthu, Xin Chen, Xiaomin Li, Younan Hua, Yihong Wu
Summary: A new spin Hall magnetoresistance (SMR) sensor has been developed with inherent frequency selectivity for applications in eddy current testing, allowing detection of surface cracks on an aluminum plate down to 0.2mm without the need for sophisticated detection circuitry.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Hang Xie, Abhishek Talapatra, Xin Chen, Ziyan Luo, Yihong Wu
Summary: The study reveals the presence of strong damping-like spin-orbit torque in WTex thin films, with the efficiency decreasing quickly as the thickness increases. By utilizing this property, efficient current-induced perpendicular magnetization switching was achieved in WTex/Ti/CoFeB multilayers, signifying the great potential of sputter-deposited WTex in spintronics applications.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Dapeng Zhu, Yi Wang, Shuyuan Shi, Kie-Leong Teo, Yihong Wu, Hyunsoo Yang
Summary: The study focused on the SOT efficiency of Bi2Se3/Fe heterostructures, showing that in situ fabrication methods exhibit higher efficiency below 100K compared to ex situ methods, largely due to a thinner interfacial layer and enhanced interface spin transparency.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Yihong Wu, Yanjun Xu, Ziyan Luo, Yumeng Yang, Hang Xie, Qi Zhang, Xinhai Zhang
Summary: Charge-spin interconversion in bilayer systems generates spin current, spin-orbit torque, and unconventional magnetoresistance, with various applications demonstrated. Recent interest in charge-spin interconversion in single-layer ferromagnets is also growing, showing potential for further research and applications.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Hang Xie, Xin Chen, Ziyan Luo, Yihong Wu
Summary: Spin-orbit torque technology provides an efficient pathway to manipulate magnetic materials, and the spin torque gate sensor achieves a linear response to external fields without magnetic bias, automatically suppressing DC offset by driving the sensor with AC current, demonstrating a new method for sensor operation.
PHYSICAL REVIEW APPLIED
(2021)
Article
Physics, Applied
Qi Zhang, Zhuangzhuang Chen, Huafeng Shi, Xin Chen, Abhishek Talapatra, Xinhai Zhang, Yihong Wu
Summary: The research focuses on the investigation of THz emission from CoFeB/Cr/Pt trilayers, with Cr playing the role of both a spin current transporter and generator. Compared to bilayer emitters, THz emission from CoFeB/Cr/Pt exhibits larger ellipticity, polarization-dependent magnetic response and temporal profile.
APPLIED PHYSICS LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Ling Lu, Xiaomin Li, Younan Hua, Yihong Wu
Summary: A high-sensitivity, low-noise, zero-offset, and negligible hysteresis spin Hall magnetoresistance (SMR) sensor has been developed recently for mapping the self-magnetic leakage field (SMLF) of stainless steel sheets. This system is effective in pre-screening steel sheets to prevent defect formation at early stages.
Article
Physics, Applied
Xin Chen, Hang Xie, Haoxuan Shen, Yihong Wu
Summary: In this study, we report a single-device based vector magnetometer enabled by spin-orbit torque, capable of measuring a vector magnetic field with high spatial resolution and low cost. By utilizing the harmonic Hall resistances of a ferromagnet/heavy metal bilayer with superparamagnetic behavior, this magnetometer can measure the vector information of a magnetic field. A L-shaped Hall device is employed to simultaneously measure all three field components, enabling the three-dimensional measurement of magnetic field amplitude and direction.
PHYSICAL REVIEW APPLIED
(2022)
Article
Multidisciplinary Sciences
Hang Xie, Xin Chen, Qi Zhang, Zhiqiang Mu, Xinhai Zhang, Binghai Yan, Yihong Wu
Summary: The electrical switching of noncollinear antiferromagnetic state in Mn3Sn can be achieved using self-generated spin torque. The spin current injection from the Ta layer can be controlled by varying the MgO thickness, and the switching sustains even at a large MgO thickness. Moreover, the switching polarity reverses when the MgO thickness exceeds a certain value.
NATURE COMMUNICATIONS
(2022)
Article
Physics, Applied
Ziyan Luo, Ling Lu, Hang Xie, Yanjun Xu, Xin Chen, Abhishek Talapatra, Adekunle Olusola Adeyeye, Younan Hua, Xiaomin Li, Yihong Wu
APPLIED PHYSICS LETTERS
(2020)
Article
Materials Science, Multidisciplinary
Yanjun Xu, Yumeng Yang, Ziyan Luo, Yihong Wu