Programmable Spin–Orbit Torque Multistate Memory and Spin Logic Cell
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Title
Programmable Spin–Orbit Torque Multistate Memory and Spin Logic Cell
Authors
Keywords
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Journal
ACS Nano
Volume 16, Issue 4, Pages 6878-6885
Publisher
American Chemical Society (ACS)
Online
2022-03-30
DOI
10.1021/acsnano.2c01930
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Related references
Note: Only part of the references are listed.- Spin–orbit torque controllable complete spin logic in a single magnetic heterojunction
- (2021) Y. N. Dong et al. APPLIED PHYSICS LETTERS
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- (2021) Xuejie Xie et al. Nature Communications
- Purely Electrical Controllable Complete Spin Logic in a Single Magnetic Heterojunction
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- (2021) Qiming Shao et al. IEEE TRANSACTIONS ON MAGNETICS
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- (2020) Jijun Yun et al. ADVANCED FUNCTIONAL MATERIALS
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- (2020) Yi Cao et al. ADVANCED MATERIALS
- Tuning Interfacial Spins in Antiferromagnetic–Ferromagnetic–Heavy-Metal Heterostructures via Spin-Orbit Torque
- (2020) X. H. Liu et al. Physical Review Applied
- Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control
- (2020) Gerard Joseph Lim et al. Advanced Electronic Materials
- Current‐Induced Spin–Orbit Torques for Spintronic Applications
- (2020) Jeongchun Ryu et al. ADVANCED MATERIALS
- Deterministic Spin–Orbit Torque Switching by a Light-Metal Insertion
- (2020) Armin Razavi et al. NANO LETTERS
- Complementary Lateral‐Spin–Orbit Building Blocks for Programmable Logic and In‐Memory Computing
- (2020) Nan Zhang et al. Advanced Electronic Materials
- Nonvolatile Multistates Memories for High-Density Data Storage
- (2020) Qiang Cao et al. ACS Applied Materials & Interfaces
- Memristive crossbar arrays for brain-inspired computing
- (2019) Qiangfei Xia et al. NATURE MATERIALS
- Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn
- (2019) Jing Zhou et al. Science Advances
- Field-Free Programmable Spin Logics via Chirality-Reversible Spin-Orbit Torque Switching
- (2018) Xiao Wang et al. ADVANCED MATERIALS
- Reconfigurable Skyrmion Logic Gates
- (2018) Shijiang Luo et al. NANO LETTERS
- Spintronics based random access memory: a review
- (2017) Sabpreet Bhatti et al. Materials Today
- Programmable Spin Logic Based on Spin Hall Effect in a Single Device
- (2017) Caihua Wan et al. Advanced Electronic Materials
- Coexistence of perpendicular and in-plane exchange bias using a single ferromagnetic layer in Pt/Co/Cr/CoO thin film
- (2016) Mustafa Öztürk et al. EPL
- Spin–orbit torque switching without an external field using interlayer exchange coupling
- (2016) Yong-Chang Lau et al. Nature Nanotechnology
- Field-free switching of perpendicular magnetization through spin–orbit torque in antiferromagnet/ferromagnet/oxide structures
- (2016) Young-Wan Oh et al. Nature Nanotechnology
- Spintronic Sensors
- (2016) Paulo P. Freitas et al. PROCEEDINGS OF THE IEEE
- Field-free magnetization reversal by spin-Hall effect and exchange bias
- (2016) A. van den Brink et al. Nature Communications
- Domain-wall velocities of up to 750 m s−1 driven by exchange-coupling torque in synthetic antiferromagnets
- (2015) See-Hun Yang et al. Nature Nanotechnology
- Perpendicular exchange bias effect in sputter-deposited CoFe/IrMn bilayers
- (2014) J. Y. Chen et al. APPLIED PHYSICS LETTERS
- Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields
- (2014) Guoqiang Yu et al. Nature Nanotechnology
- Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions
- (2012) Yue Zhang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect
- (2012) Luqiao Liu et al. PHYSICAL REVIEW LETTERS
- Breaking the Speed Limits of Phase-Change Memory
- (2012) D. Loke et al. SCIENCE
- Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
- (2011) Ioan Mihai Miron et al. NATURE
- Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer
- (2010) Ioan Mihai Miron et al. NATURE MATERIALS
- Simultaneous in-plane and out-of-plane exchange bias using a single antiferromagnetic layer resolved by x-ray magnetic circular dichroism
- (2009) J. Nogués et al. APPLIED PHYSICS LETTERS
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