Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
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Title
Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
Authors
Keywords
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Journal
Materials
Volume 13, Issue 7, Pages 1538
Publisher
MDPI AG
Online
2020-04-01
DOI
10.3390/ma13071538
References
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Related references
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