Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

Published 2018 View Full Article

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Title
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 5, Pages 711-714
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-03-09
DOI
10.1109/led.2018.2813312

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