Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN

(2020) Shubhra S. Pasayat et al.   Materials

First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain

(2019) Chirag Gupta et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN

(2019) Shubhra Pasayat et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Mechanical properties of porous silicon and oxidized porous silicon by nanoindentation technique

(2018) Souheyla Fakiri et al.   MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING

High luminous efficacy green light-emitting diodes with AlGaN cap layer

(2016) Abdullah I. Alhassan et al.   OPTICS EXPRESS

InGaN-based visible light-emitting diodes on ScAlMgO4(0001) substrates

(2015) Takuya Ozaki et al.   Applied Physics Express

InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays

(2015) Stacia Keller et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Relaxedc-plane InGaN layers for the growth of strain-reduced InGaN quantum wells

(2015) Karine Hestroffer et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates

(2014) Takuya Ozaki et al.   Applied Physics Express

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

(2014) J. Däubler et al.   APPLIED PHYSICS LETTERS

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

(2014) S. L. Rhode et al.   JOURNAL OF APPLIED PHYSICS

Mechanical Properties of Nanoporous GaN and Its Application for Separation and Transfer of GaN Thin Films

(2013) Shanjin Huang et al.   ACS Applied Materials & Interfaces

Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

(2013) J. Pal et al.   JOURNAL OF APPLIED PHYSICS

A GaN-Based LED With Perpendicular Structure Fabricated on a ZnO Substrate by MOCVD

(2013) Yan Lei et al.   Journal of Display Technology

Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates

(2013) Jing Zhang et al.   IEEE Photonics Journal

Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition

(2011) Zheng Li et al.   APPLIED SURFACE SCIENCE

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

On ternary nitride substrates for visible semiconductor light-emitters

(2010) T. K. Sharma et al.   APPLIED PHYSICS LETTERS

Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition

(2010) Dongjin Won et al.   JOURNAL OF APPLIED PHYSICS

Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate

(2010) Seoung-Hwan Park et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

A conductivity-based selective etching for next generation GaN devices

(2010) Yu Zhang et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

(2008) Shi Jong Leem et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY