Anomalous band alignment change of SiO2/4H–SiC (0001) and (000–1) MOS capacitors induced by NO-POA and its possible origin

Material science and device physics in SiC technology for high-voltage power devices

(2015) Tsunenobu Kimoto   JAPANESE JOURNAL OF APPLIED PHYSICS

Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

(2015) Atthawut Chanthaphan et al.   AIP Advances

Atomic state and characterization of nitrogen at the SiC/SiO2 interface

(2014) Y. Xu et al.   JOURNAL OF APPLIED PHYSICS

Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density

(2011) R. Kosugi et al.   APPLIED PHYSICS LETTERS

Electron trapping in 4H-SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation

(2011) A. F. Basile et al.   JOURNAL OF APPLIED PHYSICS

Atomistic structure of amorphous silicon nitride from classical molecular dynamics simulations

(2011) Mariella Ippolito et al.   PHYSICAL REVIEW B

Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

(2010) Dai Okamoto et al.   APPLIED PHYSICS LETTERS

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

(2008) Kunihiko Iwamoto et al.   APPLIED PHYSICS LETTERS

Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

(2008) K. Kakushima et al.   SOLID-STATE ELECTRONICS