Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers

Published 2008 View Full Article

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Title
Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers
Authors
Keywords
-
Journal
MICROELECTRONICS JOURNAL
Volume 40, Issue 2, Pages 346-348
Publisher
Elsevier BV
Online
2008-09-19
DOI
10.1016/j.mejo.2008.07.064

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