Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON

Boosting Carrier Mobility in Zinc Oxynitride Thin-Film Transistors via Tantalum Oxide Encapsulation

(2019) Taeho Kim et al.   ACS Applied Materials & Interfaces

Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

(2019) Oliver Lahr et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low‐Voltage Operation of Ring Oscillators Based on Room‐Temperature‐Deposited Amorphous Zinc‐Tin‐Oxide Channel MESFETs

(2019) Oliver Lahr et al.   Advanced Electronic Materials

Supreme performance of zinc oxynitride thin film transistors via systematic control of the photo-thermal activation process

(2018) Hyun-Jun Jeong et al.   Journal of Materials Chemistry C

Near-Infrared Photoresponsivity of ZnON Thin-Film Transistor with Energy Band-Tunable Semiconductor

(2018) Hyun-Mo Lee et al.   ACS Applied Materials & Interfaces

MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature

(2018) Sofie Vogt et al.   APPLIED PHYSICS LETTERS

In Situ Chemical Modification of Schottky Barrier in Solution-Processed Zinc Tin Oxide Diode

(2016) Youngbae Son et al.   ACS Applied Materials & Interfaces

Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors

(2016) Chan-Yong Jeong et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Submicrometer ZnON Thin-Film Transistors With Record Field-Effect Mobility

(2016) Chin-I Kuan et al.   IEEE ELECTRON DEVICE LETTERS

The effects of active layer thickness and annealing conditions on the electrical performance of ZnON thin-film transistors

(2016) Jozeph Park et al.   JOURNAL OF ALLOYS AND COMPOUNDS

A study on the electron transport properties of ZnON semiconductors with respect to the relative anion content

(2016) Jozeph Park et al.   Scientific Reports

Study on the Photoresponse of Amorphous In–Ga–Zn–O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap-State Distribution and Device Simulation

(2015) Jun Tae Jang et al.   ACS Applied Materials & Interfaces

Ar plasma treated ZnON transistor for future thin film electronics

(2015) Eunha Lee et al.   APPLIED PHYSICS LETTERS

Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors

(2015) Kyung-Chul Ok et al.   CERAMICS INTERNATIONAL

Metal-Semiconductor Field-Effect Transistors With In–Ga–Zn–O Channel Grown by Nonvacuum-Processed Mist Chemical Vapor Deposition

(2015) Giang T. Dang et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement of Ru–Si–O/In–Ga–Zn–O MESFET Performance by Reducing Depletion Region Trap Density

(2015) Jakub Kaczmarski et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates

(2015) Kyung-Chul Ok et al.   IEEE ELECTRON DEVICE LETTERS

Localized Tail States and Electron Mobility in Amorphous ZnON Thin Film Transistors

(2015) Sungsik Lee et al.   Scientific Reports

Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

(2014) Eunha Lee et al.   Scientific Reports

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors

(2013) Hyun-Suk Kim et al.   Scientific Reports

High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

(2012) Adrian Chasin et al.   APPLIED PHYSICS LETTERS

Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 $^{\circ}\hbox{C}$ on a Flexible Substrate

(2011) Dong Hee Lee et al.   IEEE ELECTRON DEVICE LETTERS

Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

(2010) M. Lorenz et al.   APPLIED PHYSICS LETTERS

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

(2009) Yan Ye et al.   JOURNAL OF APPLIED PHYSICS