Metal-Semiconductor Field-Effect Transistors Based on the Amorphous Multi-Anion Compound ZnON

Electrical properties of metal-semiconductor field-effect transistors (MESFETs) based on the amorphous n-type multi-anion compound zinc oxynitride (ZnON) comprising reactively sputtered platinum as Schottky gate are presented. The Schottky barrier diodes reveal a rectification ratio of 4 x 10(3) at +/- 2 V and an ideality factor of 1.43. The investigated MESFETs show good switching characteristics with a switching voltage below 2 V, low subthreshold swing of 112 mV dec(-1) and reasonable current on/off ratios up to 5 x 10(5). Additionally, the stability of the devices under visible light illumination is proven.