Robust two-dimensional topological insulators in derivatives of group-VA oxides with large band gap: Tunable quantum spin Hall states

Title
Robust two-dimensional topological insulators in derivatives of group-VA oxides with large band gap: Tunable quantum spin Hall states
Authors
Keywords
Group-VA, 2D topological insulators, Band inversion, Surface functionalization, Strain engineering, Quantum spin-Hall state
Journal
Applied Materials Today
Volume 15, Issue -, Pages 163-170
Publisher
Elsevier BV
Online
2019-01-31
DOI
10.1016/j.apmt.2019.01.006

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