Pressure and electric field tuning of Schottky contacts in PdSe2/ZT-MoSe2 van der Waals heterostructure
Published 2019 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Pressure and electric field tuning of Schottky contacts in PdSe2/ZT-MoSe2 van der Waals heterostructure
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 31, Issue 14, Pages 145710
Publisher
IOP Publishing
Online
2019-12-03
DOI
10.1088/1361-6528/ab5de1
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS 2 heterostructure by an electric gating
- (2018) Chuong V. Nguyen SUPERLATTICES AND MICROSTRUCTURES
- First principle study on the electronic properties and Schottky contact of graphene adsorbed on MoS 2 monolayer under applied out-plane strain
- (2018) Huynh V. Phuc et al. SURFACE SCIENCE
- Monolayer PdSe2: A promising two-dimensional thermoelectric material
- (2018) Dan Qin et al. Scientific Reports
- Two-dimensional transitional metal dihydride crystals with anisotropic and spin-polarized Fermi Dirac cones
- (2018) Haifeng Lv et al. Journal of Materials Chemistry C
- Understanding the transport and contact properties of metal/BN-MoS2 interfaces to realize high performance MoS2 FETs
- (2018) Jie Su et al. JOURNAL OF ALLOYS AND COMPOUNDS
- First-principles study of the structural and electronic properties of graphene/MoS2 interfaces
- (2017) Nguyen Ngoc Hieu et al. JOURNAL OF APPLIED PHYSICS
- Tunnelling characteristics of Stone–Wales defects in monolayers of Sn and group-V elements
- (2017) Pooja Jamdagni et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics
- (2017) Akinola D. Oyedele et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Interfacial properties of borophene contacts with two-dimensional semiconductors
- (2017) Jie Yang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- van der Waals heterostructures based on allotropes of phosphorene and MoSe2
- (2017) Sumandeep Kaur et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- The structures and diffusion behaviors of point defects and their influences on the electronic properties of 2D stanene
- (2017) Limeng Shen et al. RSC Advances
- Tuning the Schottky contacts at the graphene/WS2 interface by electric field
- (2017) Fang Zhang et al. RSC Advances
- Graphene/phosphorene bilayer: High electron speed, optical property and semiconductor-metal transition with electric field
- (2016) Arqum Hashmi et al. CURRENT APPLIED PHYSICS
- Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
- (2016) Y. Liu et al. Science Advances
- Electronic, transport, and optical properties of bulk and mono-layer PdSe2
- (2015) Jifeng Sun et al. APPLIED PHYSICS LETTERS
- Phase engineering of monolayer transition-metal dichalcogenide through coupled electron doping and lattice deformation
- (2015) Bin Ouyang et al. APPLIED PHYSICS LETTERS
- First-Principles Study of Phosphorene and Graphene Heterostructure as Anode Materials for Rechargeable Li Batteries
- (2015) Gen-Cai Guo et al. Journal of Physical Chemistry Letters
- Two-dimensional materials and their prospects in transistor electronics
- (2015) F. Schwierz et al. Nanoscale
- Quantum transport in Dirac materials: Signatures of tilted and anisotropic Dirac and Weyl cones
- (2015) Maximilian Trescher et al. PHYSICAL REVIEW B
- Simulated scanning tunneling microscopy images of few-layer phosphorus capped by graphene and hexagonal boron nitride monolayers
- (2015) Pablo Rivero et al. PHYSICAL REVIEW B
- van der Waals Heterostructure of Phosphorene and Graphene: Tuning the Schottky Barrier and Doping by Electrostatic Gating
- (2015) J. E. Padilha et al. PHYSICAL REVIEW LETTERS
- Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus
- (2015) J. Kim et al. SCIENCE
- Tunable Schottky contacts in hybrid graphene–phosphorene nanocomposites
- (2015) Wei Hu et al. Journal of Materials Chemistry C
- Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures
- (2014) Gi Woong Shim et al. ACS Nano
- Structures and Phase Transition of a MoS2 Monolayer
- (2014) M. Kan et al. Journal of Physical Chemistry C
- Electronics based on two-dimensional materials
- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Graphene, a material for high temperature devices – intrinsic carrier density, carrier drift velocity and lattice energy
- (2014) Yan Yin et al. Scientific Reports
- The physics and chemistry of the Schottky barrier height
- (2014) Applied Physics Reviews
- Graphene-Like Two-Dimensional Materials
- (2013) Mingsheng Xu et al. CHEMICAL REVIEWS
- Electronic and optical properties of graphene and graphitic ZnO nanocomposite structures
- (2013) Wei Hu et al. JOURNAL OF CHEMICAL PHYSICS
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
- (2013) Manish Chhowalla et al. Nature Chemistry
- Tightly bound trions in monolayer MoS2
- (2012) Kin Fai Mak et al. NATURE MATERIALS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide
- (2012) J. Ristein et al. PHYSICAL REVIEW LETTERS
- van der Waals Bonding in Layered Compounds from Advanced Density-Functional First-Principles Calculations
- (2012) T. Björkman et al. PHYSICAL REVIEW LETTERS
- Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
- (2012) Di Xiao et al. PHYSICAL REVIEW LETTERS
- Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
- (2012) L. Britnell et al. SCIENCE
- Tunable electronic structures of graphene/boron nitride heterobilayers
- (2011) Yingcai Fan et al. APPLIED PHYSICS LETTERS
- Graphene/GaN Schottky diodes: Stability at elevated temperatures
- (2011) S. Tongay et al. APPLIED PHYSICS LETTERS
- First-principles study of strain-induced modulation of energy gaps of graphene/BN and BN bilayers
- (2011) Xiaoliang Zhong et al. PHYSICAL REVIEW B
- Topological Aspect and Quantum Magnetoresistance ofβ−Ag2Te
- (2011) Wei Zhang et al. PHYSICAL REVIEW LETTERS
- Metacinnabar (β-HgS): A Strong 3D Topological Insulator with Highly Anisotropic Surface States
- (2011) François Virot et al. PHYSICAL REVIEW LETTERS
- Carbon-Based Supercapacitors Produced by Activation of Graphene
- (2011) Y. Zhu et al. SCIENCE
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Effects of strain on electronic properties of graphene
- (2010) Seon-Myeong Choi et al. PHYSICAL REVIEW B
- Chemical methods for the production of graphenes
- (2009) Sungjin Park et al. Nature Nanotechnology
- Tight-Binding Modeling and Low-Energy Behavior of the Semi-Dirac Point
- (2009) S. Banerjee et al. PHYSICAL REVIEW LETTERS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search