Movement of a-type dislocations in AlN under electron beam irradiation

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

(2019) M. X. Wang et al.   APPLIED PHYSICS LETTERS

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

(2018) Yosuke Nagasawa et al.   Applied Sciences-Basel

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

(2017) Houqiang Fu et al.   IEEE ELECTRON DEVICE LETTERS

85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering

(2017) Tzu-Yu Wang et al.   Scientific Reports

Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD

(2017) Houqiang Fu et al.   IEEE Journal of the Electron Devices Society

Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

(2015) Joel T. Asubar et al.   Applied Physics Express

Movement of basal plane dislocations in GaN during electron beam irradiation

(2015) E. B. Yakimov et al.   APPLIED PHYSICS LETTERS

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

(2014) Hideki Hirayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Strain relaxation in AlGaN multilayer structures by inclined dislocations

(2009) D. M. Follstaedt et al.   JOURNAL OF APPLIED PHYSICS