High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

(2018) Norman Susilo et al.   APPLIED PHYSICS LETTERS

Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

(2018) Noritoshi Maeda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High-Temperature Annealing

(2018) Junya Hakamata et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

AlGaN photonics: recent advances in materials and ultraviolet devices

(2018) Dabing Li et al.   Advances in Optics and Photonics

Crystal quality evolution of AlN films via high-temperature annealing under ambient N2

(2018) Mingxing Wang et al.   CRYSTENGCOMM

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

(2018) Yosuke Nagasawa et al.   Applied Sciences-Basel

Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy

(2017) Ryo Yoshizawa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

(2016) Hideto Miyake et al.   Applied Physics Express

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

(2016) Hideto Miyake et al.   JOURNAL OF CRYSTAL GROWTH

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

(2016) Chenguang He et al.   Scientific Reports

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

(2016) Lisheng Zhang et al.   Scientific Reports

Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique

(2015) X. Zhang et al.   CRYSTENGCOMM

AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

(2015) Jianchang Yan et al.   JOURNAL OF CRYSTAL GROWTH

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

(2013) Peng Dong et al.   APPLIED PHYSICS LETTERS

Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films

(2011) Shibo Yang et al.   Applied Physics Express

Strain distribution and interface modulation of highly lattice-mismatched InN/GaN heterostructure nanowires

(2009) Y. H. Kim et al.   APPLIED PHYSICS LETTERS

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

(2008) R. Jain et al.   APPLIED PHYSICS LETTERS