85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
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Title
85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
Authors
Keywords
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Journal
Scientific Reports
Volume 7, Issue 1, Pages -
Publisher
Springer Nature
Online
2017-10-25
DOI
10.1038/s41598-017-14825-8
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- AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
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- Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region
- (2011) Ryan G. Banal et al. APPLIED PHYSICS LETTERS
- Ultraviolet light emitting diodes
- (2011) Gintautas Tamulaitis Lithuanian Journal of Physics
- Advances in group III-nitride-based deep UV light-emitting diode technology
- (2010) M Kneissl et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
- (2009) A. Bhattacharyya et al. APPLIED PHYSICS LETTERS
- 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
- (2009) Hideki Hirayama et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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