Article
Chemistry, Multidisciplinary
Lu Wang, Yukai Zhang, Peng Zhang, Dianzhong Wen
Summary: Organic-resistance random access memory (ORRAM) has high potential in the field of green nonvolatile memory. Researchers have successfully fabricated a flexible memory device with physically transient properties using silver ions and egg albumen composites as active layers. The device exhibits write-once-read-many-times (WORM) characteristics and can perform logical operations. Furthermore, the active layer film of the device can be dissolved in deionized water.
Article
Materials Science, Multidisciplinary
B. Sun, S. Ranjan, G. Zhou, T. Guo, Y. Xia, L. Wei, Y. N. Zhou, Y. A. Wu
Summary: Resistive random-access memory provides dual functionalities of data storage and computing at the same position, making it a promising candidate for energy efficient neuromorphic computing. The key points to realize neuromorphic computing include selection of functional materials, design of multistate devices, and complete logic function implementation in-memory computing. A memristor device with stable intermediate multistate resistive switching behaviors has been demonstrated, which enables simulated pixel data storage and 2-bit parallel logic computations for neuromorphic computing.
MATERIALS TODAY ADVANCES
(2021)
Article
Physics, Applied
Yizhen Li, Xinhui Zhao, Ke Chang, Yiru Niu, Xinna Yu, Hui Wang
Summary: This study improved the resistive switching behavior of a memory device by adding MoS2 quantum dots between the W bottom electrode and ZnO insulator. The modified device showed better switching properties and was successfully transferred onto a polyvinyl alcohol substrate, making it fully degradable.
PHYSICAL REVIEW APPLIED
(2022)
Article
Chemistry, Multidisciplinary
Subham Paramanik, Amlan J. Pal
Summary: A family of rudorffites based on silver-bismuth-iodide undergoes a transition from positive photoconductivity (PPC) to negative photoconductivity (NPC) with variation in precursor stoichiometry. The NPC is observed in silver-rich rudorffites due to illumination-induced trap-states leading to carrier recombination and decreased conductivity. In addition to photoconductivity, the rudorffite-based devices exhibit resistive switching between high resistive state (HRS) and low resistive state (LRS) under voltage pulses, and the switching process is reversible and associated with a memory phenomenon. The NPC-exhibiting rudorffites also switch to the HRS under illumination, indicating control of resistive state through electrical and optical inputs. These interesting properties are utilized to demonstrate OR logic gate operation and suggest the materials' potential for in-memory logic operations.
Article
Chemistry, Multidisciplinary
S. Zhu, B. Sun, G. Zhou, C. Ke, T. Guo, H. Zhao, F. Yang, Y. Zhang, Y. A. Wu, Y. Zhao
Summary: Memristor, as an emerging micro/nano device, shows great potential in neuromorphic computing and logical operations. A flexible memristor with Al/TiOx/Al/polyethylene terephthalate structure was developed to investigate the synergistic effect from oxygen vacancy, H2O molecule, and NaCl. The forming-free resistive switching behavior observed in the flexible memristor is sensitive to NaCl and H2O molecules and can be used for weight update in online learning.
MATERIALS TODAY CHEMISTRY
(2022)
Article
Materials Science, Multidisciplinary
Ying Lu, Shuang Gao, Fali Li, Youlin Zhou, Zhuolin Xie, Huali Yang, Wuhong Xue, Benlin Hu, Xiaojian Zhu, Jie Shang, Yiwei Liu, Run-Wei Li
Summary: This paper presents an intrinsically stretchable and twistable resistive switching memory with a large memory window and excellent retention, capable of ensuring data integrity during dynamic stretching-release processes. A logic-in-memory computation prototype is successfully implemented using three stretched memory cells.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Chemistry, Physical
Miaocheng Zhang, Xingyu Chen, Ziyang Chen, Ronghui Dan, Yixin Wei, Huanhuan Rong, Qiang Wang, Xi Chen, Aoze Han, Yu Wang, Weijin Shao, Hao Zhang, Yerong Zhang, Lei Wang, Jianguang Xu, Yi Tong
Summary: Novel barium ferrite-based ferroelectric memristors with MXene Ti3C2 enhancement have been fabricated. These memristors can convert from stable threshold-switching to resistive-switching behavior under compliance currents. A one-bit adder circuit was demonstrated and a deep neural network was designed for image classification using these ferroelectric crossbar arrays.
APPLIED SURFACE SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Qi Xue, Tao Hang, Zheng Gong, Linfeng Chen, Jianghu Liang, Yu Sun, Di Lu, Xiaonong Zhang, Chun-Chao Chen, Ming Li
Summary: The study uses electrochemically-deposited zinc oxide (ED-ZnO) films with excellent crystallinity and oxygen vacancy-poor properties to fabricate transient resistive memory devices, showing stable performance and outstanding endurance. Additionally, a fully degradable RRAM device is demonstrated through water-assisted transfer printing method, exhibiting biocompatibility. These results highlight the significant potential of ED-ZnO based transient RRAM for data storage applications.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Materials Science, Ceramics
Hee Ju Yun, Sung Yeon Ryu, Ha Young Lee, Woo Young Park, Soo Gil Kim, Byung Joon Choi
Summary: Rare-earth oxide materials show interesting resistive switching properties in resistive switching memory. Post-deposition annealing of GdOx films enhances the tunability of resistance states, which is beneficial for multi-level operation. The effects of crystallization and hygroscopic nature of GdOx film on resistive switching characteristics are investigated.
CERAMICS INTERNATIONAL
(2021)
Review
Engineering, Electrical & Electronic
Yue Xi, Bin Gao, Jianshi Tang, An Chen, Meng-Fan Chang, Xiaobo Sharon Hu, Jan Van Der Spiegel, He Qian, Huaqiang Wu
Summary: This article reviews analog resistive switching memory (RSM) devices and their hardware technologies for in-memory learning, discussing the impact of different FoM levels on system functionality and efficiency, analyzing hardware optimization methods, and discussing the challenges and prospects from the device to system level.
PROCEEDINGS OF THE IEEE
(2021)
Article
Chemistry, Multidisciplinary
Tong Chen, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu, Ling Xu
Summary: With the advent of the big data and artificial intelligence era, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways find significant applications in neuromorphic computing, akin to tunable weight of biological synapses. However, detecting the components of conductive tunable nanopathways in a-SiNx:H RRAM has been a challenge due to down-scaling thickness to the nanoscale during resistive switching. In this study, we show for the first time that the evolution of a Si dangling bond nanopathway in a-SiNx:H resistive switching memory can be tracked by transient current at different resistance states.
Article
Automation & Control Systems
Saverio Ricci, Piergiulio Mannocci, Matteo Farronato, Shahin Hashemkhani, Daniele Ielmini
Summary: This study focuses on a hardware implementation of forming-free devices crosspoint array for accelerating machine learning tasks. The experimental results demonstrate accurate hardware MVM and successful data classification with high accuracy, supporting the use of forming-free crosspoint arrays for advanced machine learning acceleration.
ADVANCED INTELLIGENT SYSTEMS
(2022)
Review
Chemistry, Multidisciplinary
Somnath S. Kundale, Girish U. Kamble, Pradnya P. Patil, Snehal L. Patil, Kasturi A. Rokade, Atul C. Khot, Kiran A. Nirmal, Rajanish K. Kamat, Kyeong Heon Kim, Ho-Myoung An, Tukaram D. Dongale, Tae Geun Kim
Summary: Electrochemical synthesis is the most widely used technique for fabricating resistive-switching-based memory devices. This review article summarizes the electrochemical approaches for memory storage, neuromorphic computing, and sensing applications, highlighting their advantages and performance metrics. The challenges and future research directions for this field are also discussed.
Article
Engineering, Electrical & Electronic
Mario Lanza, Gabriel Molas, Ishai Naveh
Summary: While research on resistive switching materials is growing, Intel's recent shutdown of its resistive switching memory manufacturing plant raises questions about the future of nanoelectronic technologies based on resistive switching devices.
NATURE ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
Saihu Pan, Zhiqiang Zhu, Hang Yu, Weixia Lan, Bin Wei, Kunping Guo
Summary: The study investigated the resistive switching characteristics of emerging organic resistive switching memory (ORSM) devices, demonstrating concentration-dependent resistance switching by varying the blending concentration of OXD-7. Incorporating both OXD-7 and PBD into PVK donors resulted in ternary resistive memory characteristics with well-separated current ratios. The detailed analysis of electrical properties and intertrap charge transfer in D-A and D-A-A systems was performed to unveil the resistive switching mechanism of non-volatile memories.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Computer Science, Information Systems
Yilin Chen, Qing Zhu, Jiejie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao
Summary: This study investigates the negative shift of threshold voltage and degradation of leakage current in a Si3N4/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor under UV light. The increase in leakage current is observed due to the capture of holes generated by UV illumination, while blue light and darkness do not have the same effect. Simulation results show that the trapped holes significantly increase the electric field strength in Si3N4.
SCIENCE CHINA-INFORMATION SCIENCES
(2023)
Article
Chemistry, Multidisciplinary
Rui Wang, Kun Liang, Saisai Wang, Yaxiong Cao, Yuhan Xin, Yaqian Peng, Xiaohua Ma, Bowen Zhu, Hong Wang, Yue Hao
Summary: Printed electronics has the potential to fabricate novel devices over a large area with low cost on nontraditional substrates, driving future data-intensive technologies. Physical unclonable functions (PUFs) offer a promising built-in hardware-security system comparable to biometrical data by utilizing intrinsic variations in the additive manufacturing process of active devices. However, printed PUFs still face challenges in achieving significant changes in devices to increase robustness to external environment noise.
ADVANCED MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Shuliang Wu, Haixia Gao, Yuxin Sun, Jingshu Guo, Yiwei Duan, Mengyi Qian, Xiaohua Ma, Yintang Yang
Summary: This article analyzes the effect of Ta-doping position on the performance of SiNx-based resistive random access memories by comparing the electrical properties and conduction mechanisms of the devices. The test results show that as the doping position moves down in the resistive switching layer, the resistance window increases during the resistive switch process, but the consistency of parameter distribution decreases. The conduction mechanism of all Ta-doped devices behaves as space charge limited current. The analysis of the RS model suggests that Ta in the RS layer connects and disconnects with localized conductive filaments, and the doping layer's adjustment ability on the conductive channel affects device stability when the doping position moves up. Proper Ta doping in the middle of the RS layer allows the device to have a large resistance window with relatively stable characteristics.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Yunlong He, Yuehua Hong, Xiaoli Lu, Yuan Li, Fang Zhang, Xichen Wang, Jianing Li, Yitong Yang, Xuefeng Zheng, Xiaohua Ma, Yue Hao
Summary: This study proposes a beta-Ga2O3 pn tunneling diode (PNT-diode) with a p-type region obtained by sputtering a thin NiOx layer in argon atmosphere. The diode exhibits good characteristics, including high current density, low specific on-resistance, high breakdown voltage, and high Baliga's figure of merit. Simulation results demonstrate that the PNT-diode can be represented by a series connection of a reverse Ni/NiOx diode and a forward NiOx/beta-Ga2O3 diode. Furthermore, simulation shows that the p-type NiOx can effectively reduce the peak electric field at the anode edge.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Physics, Applied
Tian Zhu, Xue-Feng Zheng, Tai-Xu Yin, Hao Zhang, Xiao-Hu Wang, Shao-Zhong Yue, Tan Wang, Tao Han, Xiao-Hua Ma, Yue Hao
Summary: This study investigates the effects of proton-induced trap evolution on the electrical performances of AlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility-transistors (HEMTs). Contrary to observed degradation in sheet electron density (n(s)), carrier mobility (mu(n)), and sheet resistance (R-SH), significant improvement in gate leakage current (I-G) and offstate drain-source breakdown voltage (BVDS) is found in irradiated devices. Low-frequency noise (LFN) results show increased trap density in the AlGaN layer and AlGaN/GaN interface after irradiation, leading to degradation in n(s), mu(n), and R-SH and an improvement in BVDS. The study also confirms a decrease in trap density at the insulator/semiconductor interface and an increase in trap density at the AlGaN/GaN interface after irradiation.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Jing Sun, Zhan Wang, Saisai Wang, Yaxiong Cao, Haixia Gao, Hong Wang, Xiaohua Ma, Yue Hao
Summary: In this study, a physically transient memristive device with configurable resistive switching functionality was demonstrated for security neuromorphic computing. The device exhibited typical synaptic functions and could instantly disappear in de-ionized water, providing potential perspectives on enhancing information security in neuromorphic computing systems.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Yaxiong Cao, Saisai Wang, Rui Wang, Jing Sun, Mei Yang, Xiaohua Ma, Hong Wang, Yue Hao
Summary: This article proposes a physically transient artificial neuron based on TS devices, which has fast switching speed and high switching endurance, and successfully emulates the key functions of a biological neuron. In addition, the device can disintegrate completely after being soaked in DI water at RT for 40 min, paving the way for applications in secure neuromorphic computing, biointegrated electronics, and human-machine interfaces.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Qingping Xin, Lei Gao, Faxin Ma, Shaofei Wang, Guangyu Xuan, Xiaohua Ma, Mengting Wei, Lei Zhang, Yuzhong Zhang
Summary: In this study, a functionalized MOF (Azo@MOF-199) was prepared by introducing azo molecules into the pores of MOF-199 using a vacuum assisted method. The effects of the molecular structure of the MOF material and its affinity with the modified material on the permeability and selectivity of the mixed matrix membrane were investigated. The prepared membrane showed significantly improved SO2 permeability and SO2/N-2 selectivity, with a long-term stability of more than 120 h.
JOURNAL OF MATERIALS SCIENCE
(2023)
Article
Clinical Neurology
Xiaoyan Liu, Ziqi Fan, Xuanyu Chen, Yanyan Zhang, Fangping He, Xiaohua Ma, Qing Ke
Summary: This article presents a rare case of anti-IgLON5 disease, a novel autoimmune encephalopathy, in a patient with rapidly progressive dementia (RPD). The patient exhibited overlapping sleep dysfunction, psychosis, and abnormal movement. The study highlights the importance of considering anti-IgLON5 disease as a potential differential diagnosis in RPD patients, and suggests that early initiation of immunotherapy may not yield favorable outcomes.
FRONTIERS IN NEUROLOGY
(2023)
Article
Engineering, Chemical
Jia-Hao Liu, Fei Xie, Han-Zhuo Ding, Jia-Wei Mo, Xiao-Gang Jin, Xiao-Hua Ma, Zhen-Liang Xu
Summary: This study introduces chitosan (CS) nanofibers interlayer to optimize the substrate and improve the separation performance of thin-film composite (TFC) membranes. The introduction of CS nanofibers prevents polyamide invasion, promotes interfacial polymerization (IP) reaction, and enhances the hydrophilicity of the membrane. The TFC/CS/PES membrane shows excellent separation performance with a 4.5 times increase in permeance and a high MgCl2 rejection rate. This work provides a new strategy for substrate optimization and membrane improvement.
Article
Chemistry, Physical
Junli Nie, Bingqiang Niu, Yijin Wang, Zhang He, Xingmao Zhang, HuanHuan Zheng, Yimin Lei, Peng Zhong, Xiaohua Ma
Summary: This study focuses on the synthesis of zero-dimensional MXene quantum dots (MQDs) and their incorporation into perovskite solar cells (PSCs). The MQDs demonstrate unique optical properties and display multi-functionality when incorporated into the SnO2 electron transport layer of PSCs. This results in improved charge transport, reduced nonradiative recombination, increased power conversion efficiency, and enhanced stability of the devices.
JOURNAL OF COLLOID AND INTERFACE SCIENCE
(2023)
Article
Engineering, Chemical
Qing Ju, Hongying Tang, Hao Dong, Kang Geng, Huidong Qian, Xiaohua Ma, Nanwen Li
Summary: A novel triptycene-based polybenzimidazole (Trip-PBI) material was obtained for the first time and used as a PEM or binder in high-temperature proton exchange membrane fuel cells (HT-PEMFC). By using Trip-PBI as a binder, the issues of gas transfer restriction and excessive PA diffusion in the PEM to the catalysis layer have been successfully addressed. As a result, the MEA with Trip-PBI as the binder exhibits a maximum power density of 700 mW/cm2 at 160 degrees C, which is 1.84 times that of m-PBI and 1.36 times that of PTFE. Moreover, the H2/O2 cell using Trip-PBI binder also shows good stability for 100 h at 160 degrees C with a current density of 0.3 A/cm2.
JOURNAL OF MEMBRANE SCIENCE
(2023)
Article
Engineering, Chemical
Ainur Yerzhankyzy, Yingge Wang, Feng Xu, Xiaofan Hu, Bader Ghanem, Xiaohua Ma, Marcel Balcik, Nimer Wehbe, Yu Han, Ingo Pinnau
Summary: The physical, chemical, and gas permeation properties of a heat-treated hydroxyl-functionalized Troger's base-derived intrinsically microporous polyimide, 6FDA-HTB, were studied. The results showed that polybenzoxazole (PBO) membranes obtained from thermal rearrangement had increased gas permeability but decreased selectivity. The polymer-carbon transition membranes exhibited improved gas permeability and selectivity, while the early-stage carbon membranes had further enhanced selectivity due to structural tightening.
JOURNAL OF MEMBRANE SCIENCE
(2023)
Article
Engineering, Chemical
Xiaowei Liu, Christine Matindi, Sania Kadanyo, Mengyang Hu, Shuqian Yang, Gansheng Liu, Ran Tao, Zhenyu Cui, Xiaohua Ma, Kuanjun Fang, Jianxin Li
Summary: Polyethersulfone (PES) and sulfonated polysulfone (SPSf) blend membranes with the addition of sulfonated polyethersulfone (SPES) and adipic acid were prepared for dye fractionation based on steric hindrance and charge effect. The hydrogen bonds between the polymers and adipic acid were crucial for membrane formation and arrangement. The addition of hydrophilic SPES resulted in reduced pore size, increased negative charge, and improved separation performance.
FRONTIERS OF CHEMICAL SCIENCE AND ENGINEERING
(2023)
