Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/ab0401
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Funding
- Ministry of the Environment of Japan
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Pulsed photo-electrochemical (PEC) etching was performed to fabricate mesa-structure vertical GaN p-n junction diodes without process damages which are inevitable in the conventional dry etching process. The damage-free etched surface was confirmed by photoluminescence and cathode luminescence measurements. The most beneficial property of the GaN p-n junction diodes fabricated by PEC etching was the much reduced variation in their breakdown voltages (3.83-3.88 kV) compared with those fabricated by conventional dry etching (3.36-3.81 kV). These results indicate the excellent potential of PEC etching in the fabrication of GaN power devices. (C) 2019 The Japan Society of Applied Physics
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