Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications

Graphene-based materials and their composites: A review on production, applications and product limitations

(2018) Velram Balaji Mohan et al.   COMPOSITES PART B-ENGINEERING

Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

(2018) Taha Ayari et al.   ACS Photonics

Flow modulation epitaxy of hexagonal boron nitride

(2018) D Chugh et al.   2D Materials

Releasable High-Performance GaAs Schottky Diodes for Gigahertz Operation of Flexible Bridge Rectifier

(2018) Yei Hwan Jung et al.   Advanced Electronic Materials

Transfer print techniques for heterogeneous integration of photonic components

(2017) Brian Corbett et al.   PROGRESS IN QUANTUM ELECTRONICS

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

(2017) Taha Ayari et al.   Scientific Reports

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

(2016) Taha Ayari et al.   APPLIED PHYSICS LETTERS

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

(2016) Xin Li et al.   CRYSTAL GROWTH & DESIGN

Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO

(2016) K. Pantzas et al.   JOURNAL OF CRYSTAL GROWTH

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

(2014) Jeehwan Kim et al.   Nature Communications

Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate

(2014) Tai-Min Chang et al.   ECS Journal of Solid State Science and Technology

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

(2012) S. Gautier et al.   JOURNAL OF CRYSTAL GROWTH

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

(2012) Yasuyuki Kobayashi et al.   NATURE