Journal
JOURNAL OF CRYSTAL GROWTH
Volume 370, Issue -, Pages 63-67Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2012.08.048
Keywords
Chemical lift-off; Direct wafer bonding; MOVPE; GaN
Funding
- French Agence Nationale de la Recherche
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GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N-2 as a carrier and dimethylhydrazine as an N source. 5 mm x 5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates after chemical lift-off from the sapphire substrates. X-Ray Diffraction, Scanning Electron Microscopy and Transmission Electron Microscopy confirmed the bonding of crack-free wurtzite GaN films onto a glass substrate with a very good quality of interface, i.e. continuous/uniform adherence and absence of voids or particle inclusions. Using this approach, (In) GaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming the expensive sapphire substrate so it can be utilized again for growth. (C) 2012 Elsevier B.V. All rights reserved.
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