Journal
JOURNAL OF CRYSTAL GROWTH
Volume 435, Issue -, Pages 105-109Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2015.11.007
Keywords
Characterization; Metalorganic vapor phase epitaxy; Nitrides; Zinc compounds; Solar cells
Funding
- ANR [ANR-08-HABI-0020, ANR-11-13509-0038, ANR-12-PRGE-0014]
- Agence Nationale de la Recherche (ANR) [ANR-08-HABI-0020] Funding Source: Agence Nationale de la Recherche (ANR)
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p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5 at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscoy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process. (C) 2015 Elsevier B.V. All rights reserved.
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