Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers

Spin Lifetimes Exceeding 12 ns in Graphene Nonlocal Spin Valve Devices

(2016) Marc Drögeler et al.   NANO LETTERS

Inversion of Spin Signal and Spin Filtering in Ferromagnet|Hexagonal Boron Nitride-Graphene van der Waals Heterostructures

(2016) M. Venkata Kamalakar et al.   Scientific Reports

Revisiting the measurement of the spin relaxation time in graphene-based devices

(2015) H. Idzuchi et al.   PHYSICAL REVIEW B

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

(2014) M. Venkata Kamalakar et al.   APPLIED PHYSICS LETTERS

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

(2014) P. J. Zomer et al.   APPLIED PHYSICS LETTERS

Large-scale fabrication of BN tunnel barriers for graphene spintronics

(2014) Wangyang Fu et al.   JOURNAL OF APPLIED PHYSICS

Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature

(2014) Marc Drögeler et al.   NANO LETTERS

Graphene spintronics

(2014) Wei Han et al.   Nature Nanotechnology

Effect of contacts on spin lifetime measurements in graphene

(2014) Evan Sosenko et al.   PHYSICAL REVIEW B

Effect of anisotropic spin absorption on the Hanle effect in lateral spin valves

(2014) H. Idzuchi et al.   PHYSICAL REVIEW B

Controlling Spin Relaxation in Hexagonal BN-Encapsulated Graphene with a Transverse Electric Field

(2014) M. H. D. Guimarães et al.   PHYSICAL REVIEW LETTERS

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

(2014) M. Venkata Kamalakar et al.   Scientific Reports

Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride

(2013) Takehiro Yamaguchi et al.   Applied Physics Express

One-Dimensional Electrical Contact to a Two-Dimensional Material

(2013) L. Wang et al.   SCIENCE

Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

(2012) S. J. Haigh et al.   NATURE MATERIALS

Contact-induced spin relaxation in Hanle spin precession measurements

(2012) T. Maassen et al.   PHYSICAL REVIEW B

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

(2011) Gwan-Hyoung Lee et al.   APPLIED PHYSICS LETTERS

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

(2011) S. P. Dash et al.   PHYSICAL REVIEW B

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Electronic spin transport in graphene field-effect transistors

(2010) M. Popinciuc et al.   PHYSICAL REVIEW B

Tunneling Spin Injection into Single Layer Graphene

(2010) Wei Han et al.   PHYSICAL REVIEW LETTERS

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology