Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4902814
Keywords
-
Categories
Funding
- Nano Area of Advance program at Chalmers University of technology
- EU FP7 Marie Curie Career Integration grant
- Swedish Research Council Young Researcher Grant
Ask authors/readers for more resources
Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime approximate to 500 ps and spin diffusion length approximate to 1.6 mu m in graphene with tunnel spin polarization approximate to 11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available