Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes

High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design

(2014) Daniel L. Becerra et al.   APPLIED PHYSICS LETTERS

Origin of electrons emitted into vacuum from InGaN light emitting diodes

(2014) Justin Iveland et al.   APPLIED PHYSICS LETTERS

On the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodes

(2014) Toufik Sadi et al.   APPLIED PHYSICS LETTERS

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

(2014) M. J. Davies et al.   APPLIED PHYSICS LETTERS

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

(2013) M. Binder et al.   APPLIED PHYSICS LETTERS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

(2012) Chih-Chien Pan et al.   Applied Physics Express

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

(2012) Yuji Zhao et al.   APPLIED PHYSICS LETTERS

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

(2011) Yuji Zhao et al.   Applied Physics Express

Effect of doping and polarization on carrier collection in InGaN quantum well solar cells

(2011) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling

(2009) Y. M. Park et al.   APPLIED PHYSICS LETTERS

Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0  \bar1  0) and semipolar (1 1  \bar{2}  2) orientations

(2009) Hisashi Masui et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes

(2008) Hisashi Masui et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS