Interface state density of SiO2/p-type 4H-SiC ( 0001), ( 112¯0), ( 11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

Title
Interface state density of SiO2/p-type 4H-SiC ( 0001), ( 112¯0), ( 11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 15, Pages 152108
Publisher
AIP Publishing
Online
2016-04-14
DOI
10.1063/1.4946863

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