N2O-grown oxides/4H-SiC (0001), (033¯8), and (112¯0) interface properties characterized by using p-type gate-controlled diodes

Published 2008 View Full Article

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Title
N2O-grown oxides/4H-SiC (0001), (033¯8), and (112¯0) interface properties characterized by using p-type gate-controlled diodes
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 19, Pages 193510
Publisher
AIP Publishing
Online
2008-11-14
DOI
10.1063/1.3028016
References
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