Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films

Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

(2015) Jui-Yuan Chen et al.   ADVANCED MATERIALS

Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory

(2015) Umesh Chand et al.   APPLIED PHYSICS LETTERS

Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb2O5/NbOx Films

(2014) Helge Wylezich et al.   ACS Applied Materials & Interfaces

Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 Memristors

(2014) Tiangui You et al.   ACS Applied Materials & Interfaces

Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors

(2014) Hussein Nili et al.   ADVANCED FUNCTIONAL MATERIALS

Exploiting Memristive BiFeO3Bilayer Structures for Compact Sequential Logics

(2014) Tiangui You et al.   ADVANCED FUNCTIONAL MATERIALS

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

(2014) Chun-Yang Huang et al.   APPLIED PHYSICS LETTERS

Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

(2014) Chung-Wei Hsu et al.   NANOTECHNOLOGY

Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications

(2013) Tae-Geun Seong et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Dislocation impact on resistive switching in single-crystal SrTiO3

(2013) R. J. Kamaladasa et al.   JOURNAL OF APPLIED PHYSICS

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

(2013) Seul Ji Song et al.   Scientific Reports

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Lithium niobate on insulator (LNOI) for micro-photonic devices

(2012) G. Poberaj et al.   Laser & Photonics Reviews

Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt-Dispersed SiO2 Thin Films for ReRAM

(2011) Byung Joon Choi et al.   ADVANCED MATERIALS

Control of Rectifying and Resistive Switching Behavior in BiFeO$_{3}$ Thin Films

(2011) Yao Shuai et al.   Applied Physics Express

Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

(2011) Yao Shuai et al.   JOURNAL OF APPLIED PHYSICS

Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films

(2011) Da-Shan Shang et al.   NANOTECHNOLOGY

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Resistance switching in polycrystalline BiFeO3 thin films

(2010) Kuibo Yin et al.   APPLIED PHYSICS LETTERS

Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures

(2010) Kyung Min Kim et al.   NANOTECHNOLOGY

Highly stable resistive switching on monocrystalline ZnO

(2010) Andy Shih et al.   NANOTECHNOLOGY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

(2009) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics of MnOx-based ReRAM

(2009) Sen Zhang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell

(2009) Doo Seok Jeong et al.   PHYSICAL REVIEW B

Reverse-bias-induced bipolar resistance switching in Pt∕TiO2∕SrTi0.99Nb0.01O3∕Pt devices

(2008) S. X. Wu et al.   APPLIED PHYSICS LETTERS

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

(2008) N Xu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY