Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4934269
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Funding
- Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers - MARCO
- DARPA
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By the insertion of thin InxGa1-xN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors. (C) 2015 AIP Publishing LLC.
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