Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories
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Title
Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 10, Pages 101909
Publisher
AIP Publishing
Online
2016-03-12
DOI
10.1063/1.4943788
References
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Related references
Note: Only part of the references are listed.- Phase Change Memory: Device scaling and challenges for material engineering in the GeSbTe compound system
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