Evidence for correlated structural and electrical changes in a Ge2Sb2Te5thin film from combined synchrotron X-ray techniques and sheet resistance measurements duringin situthermal annealing

Disorder-induced localization in crystalline phase-change materials

(2011) T. Siegrist et al.   NATURE MATERIALS

Phase-change random access memory: A scalable technology

(2010) S. Raoux et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

First silicide formed by reaction of Ni(13%Pt) films with Si(100): Nature and kinetics by in-situ X-ray reflectivity and diffraction

(2010) M. Putero et al.   SCRIPTA MATERIALIA

Phase Change Materials and Their Application to Nonvolatile Memories

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Amorphous to fcc-polycrystal transition in Ge2Sb2Te5 thin films studied by electrical measurements: Data analysis and comparison with direct microscopy observations

(2009) Pietro La Fata et al.   JOURNAL OF APPLIED PHYSICS

Time-Resolved Investigation of Nanosecond Crystal Growth in Rapid-Phase-Change Materials: Correlation with the Recording Speed of Digital Versatile Disc Media

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