An AlN/Al0.85Ga0.15N high electron mobility transistor

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

(2014) Sanyam Bajaj et al.   APPLIED PHYSICS LETTERS

AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

(2014) N. Yafune et al.   ELECTRONICS LETTERS

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

(2013) Sreenidhi Turuvekere et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN Channel HEMT With Extremely High Breakdown Voltage

(2013) Takuma Nanjo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack

(2013) Norimasa Yafune et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

(2013) Srabanti Chowdhury et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

(2010) Hirokuni Tokuda et al.   Applied Physics Express

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

(2008) Takuma Nanjo et al.   APPLIED PHYSICS LETTERS

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

(2008) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE