Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

标题
Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 4, Pages 518-521
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2019-02-07
DOI
10.1109/led.2019.2897911

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