Dependence of device behaviours on oxygen vacancies in ZnSnO thin-film transistors
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Title
Dependence of device behaviours on oxygen vacancies in ZnSnO thin-film transistors
Authors
Keywords
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Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 125, Issue 5, Pages -
Publisher
Springer Science and Business Media LLC
Online
2019-04-26
DOI
10.1007/s00339-019-2646-1
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