Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism
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Title
Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism
Authors
Keywords
Hafnium oxide, Atomic layer deposition, Interface, Annealing, Crystallization
Journal
Nanoscale Research Letters
Volume 14, Issue 1, Pages -
Publisher
Springer Nature
Online
2019-03-07
DOI
10.1186/s11671-019-2915-0
References
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- Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing
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- Structure and dielectric properties of amorphous high-κoxides: HfO2, ZrO2, and their alloys
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- Interface analysis of HfO2films on (1 0 0)Si using x-ray photoelectron spectroscopy
- (2009) A A Sokolov et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Compositional, structural and electronic characteristics of HfO2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering
- (2008) Li-ping Feng et al. VACUUM
- Silicon Orientation Effects in the Atomic Layer Deposition of Hafnium Oxide
- (2007) L. Nyns et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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