期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 12, 页码 1848-1851出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2874190
关键词
Wide-bandgap; p-channel; GaN; power
资金
- Intel Corporation
- AFOSR [FA9550-17-1-0048]
- NSF [1710298, 1534303, ECCS-1542081]
- PARADIM (NSF Materials Innovation Platform) [DMR-1539918]
- NSF MRSEC [DMR-1719875]
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-current (10 mA/mm) and on-off modulation (four orders) for the GaN/AlN wide-bandgap p-FET structure. A compact analytical pFET model is derived, and the results are benchmarked against the various alternatives in the literature, clarifying the heterostructure trade-offs to enable integrated wide-bandgap CMOS for next-generation compact high-power devices.
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