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Improved Black Silicon for Photovoltaic Applications

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Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition

(2012) Martin Otto et al.   APPLIED PHYSICS LETTERS

Pyramidal light trapping and hydrogen passivation for high-efficiency heteroepitaxial (100) crystal silicon solar cells

(2012) Charles W. Teplin et al.   Energy & Environmental Science

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

(2012) G. Dingemans et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition

(2012) Volker Naumann et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures

(2012) Jihun Oh et al.   Nature Nanotechnology

Broadband Optical Antireflection Enhancement by Integrating Antireflective Nanoislands with Silicon Nanoconical-Frustum Arrays

(2011) Haesung Park et al.   ADVANCED MATERIALS

Interface state energy distribution and Pb defects at Si(110)/SiO2 interfaces: Comparison to (111) and (100) silicon orientations

(2011) N. H. Thoan et al.   JOURNAL OF APPLIED PHYSICS

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

(2011) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Metal-Assisted Chemical Etching of Silicon: A Review

(2010) Zhipeng Huang et al.   ADVANCED MATERIALS

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film

(2010) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties

(2009) Volker Schmidt et al.   ADVANCED MATERIALS

Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

(2009) Pierre Saint-Cast et al.   APPLIED PHYSICS LETTERS