MoS2 nanosheet channel and guanine DNA-base charge injection layer for high performance memory transistors

Title
MoS2 nanosheet channel and guanine DNA-base charge injection layer for high performance memory transistors
Authors
Keywords
-
Journal
Journal of Materials Chemistry C
Volume 2, Issue 27, Pages 5411-5416
Publisher
Royal Society of Chemistry (RSC)
Online
2014-05-02
DOI
10.1039/c4tc00679h

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now