Formation of p–n junction with stable p-doping in graphene field effect transistors using deep UV irradiation
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Title
Formation of p–n junction with stable p-doping in graphene field effect transistors using deep UV irradiation
Authors
Keywords
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Journal
Journal of Materials Chemistry C
Volume 1, Issue 18, Pages 3078
Publisher
Royal Society of Chemistry (RSC)
Online
2013-03-09
DOI
10.1039/c3tc30232f
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