The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

Published 2010 View Full Article

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Title
The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
Authors
Keywords
-
Journal
ACS Nano
Volume 4, Issue 10, Pages 6055-6063
Publisher
American Chemical Society (ACS)
Online
2010-10-09
DOI
10.1021/nn1010914

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