Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO2Film

Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

(2012) A.G. Khairnar et al.   SOLID STATE SCIENCES

Scanning Tunneling Microscopy Study of the Multi-Step Deposited and Annealed HfSiOx Gate Dielectric

(2011) K. S. Yew et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Electrical characteristics and TDDB breakdown mechanism of N2-RTA-treated Hf-based high-κ gate dielectrics

(2011) Cheng-Li Lin et al.   MICROELECTRONIC ENGINEERING

HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

(2010) S. Mallik et al.   MICROELECTRONIC ENGINEERING

Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks

(2010) Piyas Samanta et al.   MICROELECTRONICS RELIABILITY

Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion

(2009) N.A. Chowdhury et al.   MICROELECTRONICS RELIABILITY

Properties of atomic layer deposited HfO2 thin films

(2009) Justin C. Hackley et al.   THIN SOLID FILMS

Electrical Properties of Atomic Layer Deposition HfO[sub 2] and HfO[sub x]N[sub y] on Si Substrates with Various Crystal Orientations

(2008) W. J. Maeng et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Charge trapping characteristics in high-k gate dielectrics on germanium

(2008) C. Mahata et al.   THIN SOLID FILMS