Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities

Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique

(2013) S. Pud et al.   JOURNAL OF APPLIED PHYSICS

Origin of the low-frequency noise in n-channel FinFETs

(2013) C.G. Theodorou et al.   SOLID-STATE ELECTRONICS

The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering

(2012) Talitha Nicoletti et al.   IEEE ELECTRON DEVICE LETTERS

Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

(2012) Marc Aoulaiche et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dependence of Generation–Recombination Noise With Gate Voltage in FD SOI MOSFETs

(2012) Abraham Luque Rodriguez et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs

(2012) Sara D. dos Santos et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-Frequency Noise Characterization of Strained Germanium pMOSFETs

(2011) E. Simoen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-Frequency Noise Investigation and Noise Variability Analysis in High- $k$/Metal Gate 32-nm CMOS Transistors

(2011) Diana Lopez et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low frequency noise characterization in n-channel FinFETs

(2011) R. Talmat et al.   SOLID-STATE ELECTRONICS

Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs

(2010) En Xia Zhang et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide

(2010) Chiho Lee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories

(2009) Andrea Ghetti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Probing a nonuniform two-dimensional electron gas with random telegraph signals

(2008) Ming-Jer Chen et al.   JOURNAL OF APPLIED PHYSICS

The impact of gate–image charge on RTS amplitudes in ultra-thin gate oxide n-MOSFETs

(2008) Peng Zhang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY