Role of F on the Electrical Activation of As in Ge

Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping

(2012) Giuliana Impellizzeri et al.   Applied Physics Express

Fluorine effect on As diffusion in Ge

(2011) G. Impellizzeri et al.   JOURNAL OF APPLIED PHYSICS

Fluorine in Ge: Segregation and EOR-defects stabilization

(2011) S. Boninelli et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

A trap-based positron beamline for the study of materials

(2010) J P Sullivan et al.   MEASUREMENT SCIENCE and TECHNOLOGY

Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si

(2010) M. Mastromatteo et al.   PHYSICAL REVIEW B

Fluorine codoping in germanium to suppress donor diffusion and deactivation

(2009) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Formation and evolution of F nanobubbles in amorphous and crystalline Si

(2008) S. Boninelli et al.   APPLIED PHYSICS LETTERS

Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

(2008) Sergej Brotzmann et al.   JOURNAL OF APPLIED PHYSICS

Defect engineering aspects of advanced Ge process modules

(2008) C. Claeys et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Divacancy clustering in neutron-irradiated and annealedn-type germanium

(2008) K. Kuitunen et al.   PHYSICAL REVIEW B

Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes

(2008) A. Chroneos et al.   PHYSICAL REVIEW B

Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

(2008) S. Brotzmann et al.   PHYSICAL REVIEW B