An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Thin Film Metal-Insulator-Metal Capacitors with Examples for Various High-k Dielectric Materials

Mechanisms of Difficulty to Correlate the Leakage Current of High-k Capacitor Structures with Defect States Detected Spectroscopically by the Thermally Stimulated Current Technique

(2012) W.S. Lau   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Band offsets and Fermi level pinning at metal-Al2O3interfaces

(2011) Lior Kornblum et al.   PHYSICAL REVIEW B

Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al[sub 2]O[sub 3] Thin Films

(2010) K. B. Jinesh et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

First-principles study of the rectifying properties ofPt/TiO2interface

(2009) Tomoyuki Tamura et al.   PHYSICAL REVIEW B

Segregation of oxygen vacancy at metal-HfO2 interfaces

(2008) Eunae Cho et al.   APPLIED PHYSICS LETTERS

Energy band alignment at TiO2∕Si interface with various interlayers

(2008) M. Perego et al.   JOURNAL OF APPLIED PHYSICS

Unified tunnelling-diffusion theory for Schottky and very thin MOS structures

(2008) J. Racko et al.   SOLID-STATE ELECTRONICS

Growth and characterization of indium oxide films

(2007) P. Prathap et al.   CURRENT APPLIED PHYSICS