标题
Low Variability Resistor-Memristor Circuit Masking the Actual Memristor States
作者
关键词
-
出版物
Advanced Electronic Materials
Volume 1, Issue 6, Pages 1500095
出版商
Wiley
发表日期
2015-04-24
DOI
10.1002/aelm.201500095
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Self-Limited Switching in Ta2O5/TaOxMemristors Exhibiting Uniform Multilevel Changes in Resistance
- (2015) Kyung Min Kim et al. ADVANCED FUNCTIONAL MATERIALS
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM
- (2013) Seul Ji Song et al. Scientific Reports
- Modeling for multilevel switching in oxide-based bipolar resistive memory
- (2012) Ji-Hyun Hur et al. NANOTECHNOLOGY
- A scalable neuristor built with Mott memristors
- (2012) Matthew D. Pickett et al. NATURE MATERIALS
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Towards artificial neurons and synapses: a materials point of view
- (2012) Doo Seok Jeong et al. RSC Advances
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Direct Identification of the Conducting Channels in a Functioning Memristive Device
- (2010) John Paul Strachan et al. ADVANCED MATERIALS
- Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior
- (2010) Jung Ho Yoon et al. APPLIED PHYSICS LETTERS
- Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell
- (2010) Seul Ji Song et al. APPLIED PHYSICS LETTERS
- High switching endurance in TaOx memristive devices
- (2010) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- Methods of Set Switching for Improving the Uniformity of Filament Formation in the TiO[sub 2] Thin Film
- (2010) Kyung Min Kim et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory
- (2010) Gun Hwan Kim et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- (2010) Sung Hyun Jo et al. NANO LETTERS
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Modeling for bipolar resistive memory switching in transition-metal oxides
- (2010) Ji Hyun Hur et al. PHYSICAL REVIEW B
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
- (2009) Qiangfei Xia et al. NANO LETTERS
- Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory
- (2008) S.-E. Ahn et al. ADVANCED MATERIALS
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
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